DTC114GUAT106 Rohm Semiconductor, DTC114GUAT106 Datasheet - Page 2

• Manufacturer Part Number: DTC114GUAT106
• Description: TRANS NPN 50V 100MA SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of DTC114GUAT106

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Umt: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 10mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-323
• No. Of: RoHS Compliant
• Transistor Polarity: NPN
• Dc Current Gain Hfe: 30
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC114GUAT106; DTC114GUAT106TR

 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
○
DTC114GUA / DTC114GKA
c
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗
www.rohm.com
Characteristics of built-in transistor
500
200
100
2009 ROHM Co., Ltd. All rights reserved.
1k
50
20
10
5
2
1
100μ 200μ
V
Fig.1 DC current gain
CE
=5V
COLLECTOR CURRENT : I
500μ 1m
vs. Collector current
Ta=25°C
Parameter
2m
5m 10m 20m
Ta=100°C
Ta= −40°C
C
(A)
50m 100m
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
T
EBO
Fig.2 Collector-Emitter saturation voltage
∗
500m
200m
100m
50m
20m
10m
5m
2m
1m
1
100μ 200μ
vs. Collector current
I
C
Min.
/I
300
50
50
30
B
5
−
−
7
−
=20/1
COLLECTOR CURRENT : I
500μ 1m
Typ.
250
10
2m
−
−
−
−
−
−
−
Ta=25°C
5m 10m 20m
2/2
Max.
580
0.5
0.3
13
−
−
−
−
−
Ta= −40°C
C
Ta=100°C
(A)
50m 100m
MHz
Unit
μA
μA
kΩ
V
V
V
V
−
I
I
I
V
V
I
I
V
C
C
E
C
C
CB
EB
CE
=50μA
=1mA
=720μA
=10mA, I
=5mA, V
=4V
=50V
=10V, I
CE
B
E
Conditions
=0.5mA
= −5mA, f=100MHz
=5V
−
2009.06 - Rev.C
Data Sheet