DTC114GUAT106 Rohm Semiconductor, DTC114GUAT106 Datasheet

TRANS NPN 50V 100MA SOT-323

DTC114GUAT106

Manufacturer Part Number
DTC114GUAT106
Description
TRANS NPN 50V 100MA SOT-323
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of DTC114GUAT106

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Umt
NPN
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation Pd
200mW
Dc Collector Current
10mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-323
No. Of
RoHS Compliant
Transistor Polarity
NPN
Dc Current Gain Hfe
30
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTC114GUAT106
DTC114GUAT106TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DTC114GUAT106
Manufacturer:
ROHM/罗姆
Quantity:
20 000
100mA / 50V Digital transistors
(with built-in resistor)
 Applications
Inverter, Interface, Driver
 Features
1) The built-in bias resistors consist of thin-film resistors with complete
2) Only the on / off conditions need to be set for operation, making the
3) Higher mounting densities can be achieved.
 Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
 Packaging specifications
 Absolute maximum ratings (Ta=25C)
Part No.
DTC114GUA
DTC114GKA
c
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
www.rohm.com
isolation to allow negative biasing of the input, and parasitic effects
are almost completely eliminated.
device design easy.
DTC114GUA / DTC114GKA
2009 ROHM Co., Ltd. All rights reserved.
Package
Packaging type
Code
Basic ordering unit (pieces)
Parameter
Taping
UMT3
T106
3000
Symbol
V
V
V
Tstg
Pc
Tj
CBO
CEO
EBO
I
C
Taping
SMT3
T146
3000
−55 to +150
Limits
100
200
150
50
50
5
Unit
mW
mA
°C
°C
V
V
V
1/2
 Dimensions (Unit : mm)
 Inner circuit
R=10kΩ
E : Emitter
C : Collector
B : Base
B
DTC114GUA
ROHM : UMT3
EIAJ : SC-70
DTC114GKA
ROHM : SMT3
EIAJ : SC-59
R
0.65
0.95 0.95
( 3 )
( 3 )
( 2 )
( 2 )
2.0
1.3
Abbreviated symbol : K24
Abbreviated symbol : K24
1.9
2.9
0.65
0.3
0.4
C
E
( 1 )
( 1 )
0.2
0.15
0.15
0.9
0.7
1.1
Each lead has same dimensions
Each lead has same dimensions
0.8
2009.06 - Rev.C
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector

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DTC114GUAT106 Summary of contents

Page 1

Digital transistors (with built-in resistor) DTC114GUA / DTC114GKA  Applications Inverter, Interface, Driver  Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects ...

Page 2

DTC114GUA / DTC114GKA  Electrical characteristics (Ta=25C) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage V DC current transfer ratio Emitter-base resistance Transition frequency ∗ Characteristics of built-in ...

Page 3

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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