PDTC144WE,115 NXP Semiconductors, PDTC144WE,115 Datasheet - Page 14

• Manufacturer Part Number: PDTC144WE,115
• Description: TRANS NPN W/RES SOT-416
• Manufacturer: NXP Semiconductors

Specifications of PDTC144WE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 47 KOhm
• Typical Resistor Ratio: 2.13
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2171-2; 934057867115; PDTC144WE T/R

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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R75/07/pp 14
Date of release: 2004 Aug 17
Document order number:
9397 750 13681