BC618 ON Semiconductor, BC618 Datasheet - Page 168

• Manufacturer Part Number: BC618
• Description: TRANSISTOR DARL NPN 55V TO-92
• Manufacturer: ON Semiconductor

Specifications of BC618

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 55V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 200mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC618OS

DUAL ZENERS − SURFACE MOUNT (continued)
MMBZ27VCW − Common Cathode Series
SC−70 Dual Common Cathode Zener; 40 W Peak Power (10 x 1000 ms)
1. V
MMBZ27VAW − Common Anode Series
SC−70 Dual Common Anode Zener; 40 W Peak Power (10 x 1000 ms)
2. V
ELECTRICAL CHARACTERISTICS
Bidirectional
ELECTRICAL CHARACTERISTICS
Bidirectional
MMBZ27VCL
MMBZ27VAW
BR
BR
measured at pulse test current I
measured at pulse test current I
Device
Device
(Circuit tied to Pins 1 and 2)
(Circuit Tied to Pins 1 and 2)
25.65
Min
V
Breakdown Voltage
BR
Nom
T
T
(Note 1)
(V)
27
25.65
at an ambient temperature of 25°C.
at an ambient temperature of 25°C.
Min
(T
(T
A
A
Breakdown Voltage
V
= 25°C unless otherwise noted)
= 25°C unless otherwise noted)
BR
28.35
Max
Nom
(Note 2)
(V)
27
(mA)
@ I
28.35
Max
1.0
CASE 419−04
http://onsemi.com
CASE 419−04
T
SC−70
SC−70
(mA)
@ I
Working
Reverse
1.0
Voltage
V
Peak
167
RWM
(V)
T
22
50
Reverse
Leakage
Current
I
(mA) (V)
R
ON Semiconductor Selector Guide − Diodes
@ V
Reverse
Leakage
Current
I
R
50
R
22
(nA)
1
2
Reverse
1
2
Current
Reverse
Surge
I
Current
PP
Surge
1.0
I
(A)
1.0
PP
(A)
Voltage @ I
Voltage @ I
(Clamping
(Clamping
Reverse
Voltage)
Reverse
Voltage)
3
V
V
(V)
38
C
40
C
(V)
3
PP
PP
Coefficient of
Coefficient of
Temperature
(mV/°C)
(mV/°C)
Temp
V
V
24.3
26
BR
BR