MJD31C1 ON Semiconductor, MJD31C1 Datasheet - Page 7

• Manufacturer Part Number: MJD31C1
• Description: TRANS POWER NPN 3A 100V DPAK-3
• Manufacturer: ON Semiconductor

Specifications of MJD31C1

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 1.56W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1000
100
10
1
0.1
V
Figure 21. Capacitance
C
R
C
ob
, REVERSE VOLTAGE (V)
ib
1
0.01
0.1
10
1
1
10
TYPICAL CHARACTERISTICS
V
T
A
CE
= 25°C
Figure 23. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
http://onsemi.com
100
7
10
100
10
1
0.001
1 s
Figure 22. Current−Gain−Bandwidth Product
1 ms
I
0.01
C
, COLLECTOR CURRENT (A)
100
0.1
V
T
1
A
CE
= 25°C
= 5 V
10