MJD31C1 ON Semiconductor, MJD31C1 Datasheet - Page 6

• Manufacturer Part Number: MJD31C1
• Description: TRANS POWER NPN 3A 100V DPAK-3
• Manufacturer: ON Semiconductor

Specifications of MJD31C1

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 1.56W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1000
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1
0.001
1
0
0.001
0.01
V
I
C
CE
150°C
150°C
Figure 15. DC Current Gain at V
/I
Figure 17. Collector−Emitter Saturation
Figure 19. Base−Emitter “On” Voltage
B
= 5 V
= 10
0.01
I
I
I
0.01
C
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
25°C
0.1
−55°C
−55°C
25°C
TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
Voltage
0.1
0.1
−55°C
150°C
1
1
1
CE
V
= 4 V
CE
25°C
http://onsemi.com
= 4 V
10
10
10
6
1000
100
1.6
1.2
0.8
0.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
1
2
0
0.001
0.01
0.01
10 mA
I
C
Figure 18. Base−Emitter Saturation Voltage
/I
B
Figure 20. Collector Saturation Region
Figure 16. DC Current Gain at V
150°C
= 10
−55°C
150°C
25°C
0.1
100 mA
I
0.01
C
I
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (mA)
0.1
500 mA
−55°C
1
25°C
0.1
1 A
10
1
I
C
= 3 A
1
V
100
CE
CE
= 2 V
= 2 V
25°C
T
A
=
1000
10
10