MMBT3904LT1G ON Semiconductor, MMBT3904LT1G Datasheet - Page 2
MMBT3904LT1G
Manufacturer Part Number
MMBT3904LT1G
Description
TRANS GP SS NPN 40V SOT23
Manufacturer
ON Semiconductor
Type
General Purposer
Specifications of MMBT3904LT1G
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
225 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Current, Collector
200 mA
Current, Gain
30
Frequency
300 MHz
Package Type
SOT-23
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.3 V
Voltage, Emitter To Base
6 V
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Dc
0651
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT3904LT1GOS
MMBT3904LT1GOS
MMBT3904LT1GOSTR
MMBT3904LT1GOS
MMBT3904LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT3904LT1G
Manufacturer:
ON Semiconductor
Quantity:
1 900
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MMBT3904LT1G
Manufacturer:
ON
Quantity:
30 000
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Part Number:
MMBT3904LT1G
Manufacturer:
ON
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Part Number:
MMBT3904LT1G/ON
Manufacturer:
ON/安森美
Quantity:
20 000
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
- 0.5 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter−Base Breakdown Voltage (I
Base Cutoff Current (V
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product (I
Output Capacitance (V
Input Capacitance (V
Input Impedance (V
Voltage Feedback Ratio (V
Small −Signal Current Gain (V
Output Admittance (V
Noise Figure (V
Delay Time
Rise Time
Storage Time
Fall Time
DUTY CYCLE = 2%
300 ns
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
Figure 1. Delay and Rise Time
Equivalent Test Circuit
CE
= 5.0 Vdc, I
B
B
B
B
CE
CE
CE
CE
CE
EB
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
CE
CE
CE
CB
= 10 Vdc, I
+10.9 V
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 0.5 Vdc, I
< 1 ns
= 10 Vdc, I
= 1.0 Vdc)
= 30 Vdc, V
= 5.0 Vdc, I
CE
CE
= 30 Vdc, V
= 10 Vdc, I
CE
C
10 k
= 100 mAdc, R
= 10 Vdc, I
C
Characteristic
C
C
= 1.0 mAdc, f = 1.0 kHz)
E
C
E
= 1.0 mAdc, f = 1.0 kHz)
EB
= 0, f = 1.0 MHz)
C
= 10 mAdc, I
= 0, f = 1.0 MHz)
= 10 mAdc, V
C
= 10 mAdc, I
= 3.0 Vdc)
C
(T
EB
= 1.0 mAdc, I
= 1.0 mAdc, f = 1.0 kHz)
A
C
* Total shunt capacitance of test jig and connectors
= 3.0 Vdc)
I
C
= 25°C unless otherwise noted)
(V
= 1.0 mAdc, f = 1.0 kHz)
+3 V
S
= 10 mAdc, I
I
C
CC
= 1.0 k ohms, f = 1.0 kHz)
= 10 mAdc, I
C
= 3.0 Vdc, V
E
= 0)
CE
275
= 0)
C
(V
B
S
= 20 Vdc, f = 100 MHz)
CC
http://onsemi.com
= 0)
< 4 pF*
B1
= 3.0 Vdc,
B1
= I
10 < t
DUTY CYCLE = 2%
BE
B2
= 1.0 mAdc)
= − 0.5 Vdc,
2
1
= 1.0 mAdc)
< 500 ms
0
- 9.1 V′
t
1
Figure 2. Storage and Fall Time
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
H
C
CEX
h
I
h
NF
+10.9 V
h
h
BL
f
t
t
obo
t
t
ibo
FE
T
oe
ie
re
fe
d
s
r
f
Equivalent Test Circuit
< 1 ns
0.65
1N916
Min
100
300
100
10 k
6.0
1.0
0.5
1.0
40
60
40
70
60
30
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.85
0.95
300
400
200
0.2
0.3
4.0
8.0
8.0
5.0
50
50
10
40
35
35
50
−
−
−
−
−
−
−
−
+3 V
275
X 10
mmhos
nAdc
nAdc
MHz
C
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF
pF
dB
ns
ns
S
−
−
< 4 pF*
− 4