MMBT3904LT1G ON Semiconductor, MMBT3904LT1G Datasheet

TRANS GP SS NPN 40V SOT23

MMBT3904LT1G

Manufacturer Part Number
MMBT3904LT1G
Description
TRANS GP SS NPN 40V SOT23
Manufacturer
ON Semiconductor
Type
General Purposer
Datasheets

Specifications of MMBT3904LT1G

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
225 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Current, Collector
200 mA
Current, Gain
30
Frequency
300 MHz
Package Type
SOT-23
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.3 V
Voltage, Emitter To Base
6 V
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Dc
0651
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT3904LT1GOS
MMBT3904LT1GOS
MMBT3904LT1GOSTR

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MMBT3904LT1G
General Purpose Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 10
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) @T
Derate above 25°C
@T
Derate above 25°C
A
= 25°C
Characteristic
A
Rating
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
I
P
P
CEO
CBO
, T
EBO
CM
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
200
900
225
556
300
417
6.0
1.8
2.4
40
60
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT3904LT1G
MMBT3904LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
1AM = Specific Device Code
M
G
BASE
2
MARKING DIAGRAM
3
http://onsemi.com
1
= Date Code*
= Pb−Free Package
1
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
COLLECTOR
1AM M G
EMITTER
Publication Order Number:
G
SOT−23 (TO−236)
3
2
CASE 318
STYLE 6
10,000/Tape & Reel
3000 / Tape & Reel
MMBT3904LT1/D
Shipping

Related parts for MMBT3904LT1G

MMBT3904LT1G Summary of contents

Page 1

... D 300 mW 2.4 mW/°C R 417 °C/W qJA −55 to +150 °C J stg MMBT3904LT1G MMBT3904LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 SOT−23 (TO−236) ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I C Collector −Base Breakdown Voltage ( mAdc Emitter−Base Breakdown Voltage ( mAdc Base Cutoff Current ( Vdc ...

Page 3

TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 5.0 C ibo 3.0 C obo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance 500 300 200 100 ...

Page 4

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS ( SOURCE RESISTANCE = 200 1 SOURCE RESISTANCE = 200 0 SOURCE RESISTANCE = 1 ...

Page 5

T = +150°C J +25°C 100 - 55° 0.1 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 TYPICAL STATIC CHARACTERISTICS COLLECTOR CURRENT (mA) C Figure ...

Page 6

0 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 0. COLLECTOR CURRENT (A) C Figure 17. Collector Emitter Saturation Voltage vs. Collector Current 1.4 1 1.0 ...

Page 7

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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