MJE18002 ON Semiconductor, MJE18002 Datasheet - Page 2

TRANS PWR NPN 2A 450V TO220AB

MJE18002

Manufacturer Part Number
MJE18002
Description
TRANS PWR NPN 2A 450V TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MJE18002

Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
500mV @ 200mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
14 @ 200mA, 5V
Power - Max
50W
Frequency - Transition
13MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJE18002OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJE18002
Manufacturer:
ON
Quantity:
637
Part Number:
MJE18002G
Manufacturer:
NEC
Quantity:
6 144
2. Proper strike and creepage distance must be provided.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
Collector Cutoff Current (V
Collector Cutoff Current (V
Collector Cutoff Current
Emitter Cutoff Current
Base−Emitter Saturation Voltage (I
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
DC Current Gain (I
DC Current Gain
DC Current Gain
DC Current Gain
Current Gain Bandwidth
Output Capacitance
Input Capacitance
Dynamic Saturation:
(V
(I
(I
determined 1.0 ms and
3.0 ms after rising I
reach 0.9 final I
(see Figure 18)
(I
(V
(V
C
C
EB
C
= 0.4 Adc, I
= 1.0 Adc, I
CB
EB
= 0.2 Adc, V
= 9.0 Vdc, I
= 8.0 V)
= 10 Vdc, I
B
B
(I
(I
(I
B1
C
C
C
C
C
= 40 mAdc)
= 0.2 Adc)
CE
E
= 0.2 Adc, V
= 0.4 Adc, V
= 1.0 Adc, V
= 10 mAdc, V
B1
= 0)
= 0, f = 1.0 MHz)
= 10 Vdc, f = 1.0 MHz)
(V
CE
CE
CE
Characteristic
= Rated V
= Rated V
= 800 V, V
I
I
V
I
I
V
C
B1
C
B1
CC
CC
= 0.4 A
= 1.0 A
CE
CE
CE
= 40 mA
= 0.2 A
CE
= 300 V
= 300 V
(I
C
C
= 5.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 5.0 Vdc)
= 0.4 Adc, I
= 1.0 Adc, I
C
CEO
CES
EB
(T
= 100 mA, L = 25 mH)
C
= 0)
, V
, I
= 25°C unless otherwise noted)
B
EB
= 0)
= 0)
1.0 ms
3.0 ms
1.0 ms
3.0 ms
B
B
= 40 mAdc)
= 0.2 Adc)
http://onsemi.com
@ T
@ T
@ T
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
C
C
C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
T
T
= 125°C
= 125°C
= 125°C
= 125°C
C
C
2
= 125°C
= 125°C
V
V
Symbol
V
V
CEO(sus)
CE(dsat)
CE(sat)
I
I
I
BE(sat)
CEO
h
C
CES
EBO
C
f
FE
T
ob
ib
Min
450
6.0
5.0
14
10
11
11
0.825
0.92
0.25
Typ
400
0.2
0.2
0.3
8.0
8.0
3.5
8.0
1.5
3.8
8.0
2.0
7.0
27
17
20
20
13
35
14
Max
1.25
100
100
500
100
100
600
1.1
0.5
0.5
0.5
0.6
34
60
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
pF

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