MJE18002 ON Semiconductor, MJE18002 Datasheet - Page 2
MJE18002
Manufacturer Part Number
MJE18002
Description
TRANS PWR NPN 2A 450V TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.MJE18002G.pdf
(8 pages)
Specifications of MJE18002
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
500mV @ 200mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
14 @ 200mA, 5V
Power - Max
50W
Frequency - Transition
13MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJE18002OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE18002G
Manufacturer:
NEC
Quantity:
6 144
2. Proper strike and creepage distance must be provided.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
Collector Cutoff Current (V
Collector Cutoff Current (V
Collector Cutoff Current
Emitter Cutoff Current
Base−Emitter Saturation Voltage (I
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
DC Current Gain (I
DC Current Gain
DC Current Gain
DC Current Gain
Current Gain Bandwidth
Output Capacitance
Input Capacitance
Dynamic Saturation:
(V
(I
(I
determined 1.0 ms and
3.0 ms after rising I
reach 0.9 final I
(see Figure 18)
(I
(V
(V
C
C
EB
C
= 0.4 Adc, I
= 1.0 Adc, I
CB
EB
= 0.2 Adc, V
= 9.0 Vdc, I
= 8.0 V)
= 10 Vdc, I
B
B
(I
(I
(I
B1
C
C
C
C
C
= 40 mAdc)
= 0.2 Adc)
CE
E
= 0.2 Adc, V
= 0.4 Adc, V
= 1.0 Adc, V
= 10 mAdc, V
B1
= 0)
= 0, f = 1.0 MHz)
= 10 Vdc, f = 1.0 MHz)
(V
CE
CE
CE
Characteristic
= Rated V
= Rated V
= 800 V, V
I
I
V
I
I
V
C
B1
C
B1
CC
CC
= 0.4 A
= 1.0 A
CE
CE
CE
= 40 mA
= 0.2 A
CE
= 300 V
= 300 V
(I
C
C
= 5.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 5.0 Vdc)
= 0.4 Adc, I
= 1.0 Adc, I
C
CEO
CES
EB
(T
= 100 mA, L = 25 mH)
C
= 0)
, V
, I
= 25°C unless otherwise noted)
B
EB
= 0)
= 0)
1.0 ms
3.0 ms
1.0 ms
3.0 ms
B
B
= 40 mAdc)
= 0.2 Adc)
http://onsemi.com
@ T
@ T
@ T
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
C
C
C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
T
T
= 125°C
= 125°C
= 125°C
= 125°C
C
C
2
= 125°C
= 125°C
V
V
Symbol
V
V
CEO(sus)
CE(dsat)
CE(sat)
I
I
I
BE(sat)
CEO
h
C
CES
EBO
C
f
FE
T
ob
ib
Min
450
6.0
5.0
14
10
11
11
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.825
0.92
0.25
Typ
400
0.2
0.2
0.3
8.0
8.0
3.5
8.0
1.5
3.8
8.0
2.0
7.0
27
17
20
20
13
35
14
−
−
−
−
−
−
−
Max
1.25
100
100
500
100
100
600
1.1
0.5
0.5
0.5
0.6
34
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
pF
−