PZTA42T1 ON Semiconductor, PZTA42T1 Datasheet - Page 2

• Manufacturer Part Number: PZTA42T1
• Description: TRANS SS NPN 50MA 300V SOT223
• Manufacturer: ON Semiconductor

Specifications of PZTA42T1

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: PZTA42T1OSCT

2. Pulse Test Conditions, t
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Current-Gain — Bandwidth Product
Feedback Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
120
100
(I
(I
(I
(V
(V
(I
(I
(I
(I
(V
(I
(I
80
60
40
20
C
C
E
C
C
C
C
C
C
0
CB
BE
CB
0.1
= 100 mAdc, I
= 1.0 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 30 mAdc, V
= 10 mAdc, V
= 20 mAdc, I
= 20 mAdc, I
= 6.0 Vdc, I
= 200 Vdc, I
= 20 Vdc, I
B
B
E
B
E
C
C
CE
CE
CE
E
CE
= 2.0 mAdc)
= 2.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
= 0)
= 0)
= 10 Vdc)
= 10 Vdc)
= 20 Vdc, f = 100 MHz)
= 10 Vdc)
p
= 300 ms,
T
J
-55°C
25°C
= +125°C
Characteristics
d
0.02.
A
= 25°C unless otherwise noted)
1.0
Figure 1. DC Current Gain
I
C
http://onsemi.com
, COLLECTOR CURRENT (mA)
2
V
V
V
10
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
h
CBO
EBO
C
f
FE
T
re
Min
300
300
6.0
25
40
40
50
—
—
—
—
—
Max
0.1
0.1
3.0
0.5
0.9
—
—
—
—
—
—
—
V
CE
= 10 Vdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
—
100