PZTA42T1 ON Semiconductor, PZTA42T1 Datasheet

TRANS SS NPN 50MA 300V SOT223

PZTA42T1

Manufacturer Part Number
PZTA42T1
Description
TRANS SS NPN 50MA 300V SOT223
Manufacturer
ON Semiconductor
Datasheet
1.PZTA42T1G.pdf (5 pages)

Specifications of PZTA42T1

Transistor Type
NPN
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
1.5W
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
PZTA42T1OSCT

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PZTA42T1
High Voltage Transistor
Surface Mount
NPN Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 8
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature Range
Junction Temperature
Thermal Resistance,
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
(Open Base)
(Open Emitter)
(Open Collector)
@ T
Junction−to−Ambient (Note 1)
A
= 25°C (Note 1)
Characteristic
Rating
(T
C
= 25°C unless otherwise noted)
Symbol
Symbol
V
V
V
R
T
P
CEO
CBO
EBO
T
I
qJA
stg
C
D
J
−65 to 150
Value
Max
83.3
300
300
500
150
6.0
1.5
1
mAdc
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
HIGH VOLTAGE TRANSISTOR
(Note: Microdot may be in either location)
CASE 318E
1
SOT−223
STYLE 1
P1D
A
Y
W
G
SOT−223 PACKAGE
ORDERING INFORMATION
SURFACE MOUNT
2
BASE
3
http://onsemi.com
NPN SILICON
1
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
4
COLLECTOR 2, 4
EMITTER 3
Publication Order Number:
1
MARKING
DIAGRAM
P1D G
AYW
G
PZTA42T1/D

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PZTA42T1 Summary of contents

Page 1

... HIGH VOLTAGE TRANSISTOR SURFACE MOUNT COLLECTOR 2, 4 BASE 1 EMITTER 3 MARKING 4 DIAGRAM AYW SOT−223 P1D G CASE 318E G STYLE 1 1 P1D = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Publication Order Number: PZTA42T1/D ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1.0 mAdc Collector-Base Breakdown Voltage (I = 100 mAdc Emitter-Base Breakdown Voltage (I = 100 mAdc, I ...

Page 3

I , COLLECTOR CURRENT (mA) C Figure 3. “ON” Voltages 100 10 0 COLLECTOR CURRENT (mA) C Figure 4. Current Gain Bandwidth ...

Page 4

... ORDERING INFORMATION Device PZTA42T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package SOT−223 (Pb−Free) http://onsemi.com 4 † Shipping 1000 / Tape & Reel ...

Page 5

... STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 6.3 0.248 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative PZTA42T1/D MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 ...

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