PZT751T1 ON Semiconductor, PZT751T1 Datasheet

TRANS SS HC PNP 2A 60V SOT223

PZT751T1

Manufacturer Part Number
PZT751T1
Description
TRANS SS HC PNP 2A 60V SOT223
Manufacturer
ON Semiconductor
Datasheet

Specifications of PZT751T1

Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 1A, 2V
Power - Max
800mW
Frequency - Transition
75MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
PZT751T1OSCT

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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PZT751T1G
PNP Silicon Planar
Epitaxial Transistor
industrial and consumer applications. The device is housed in the
SOT- -223 package which is designed for medium power surface
mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using minimum
 Semiconductor Components Industries, LLC, 2010
October, 2010 - - Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector--Emitter Voltage
Collector--Base Voltage
Emitter--Base Voltage
Collector Current
Total Power Dissipation
@ T
Derate above 25C
Storage Temperature Range
Junction Temperature
Thermal Resistance from Junction--to--
Ambient in Free Air
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
This PNP Silicon Epitaxial transistor is designed for use in
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
Compliant
High Current: 2.0 A
The SOT- -223 Package can be soldered using wave or reflow.
SOT- -223 package ensures level mounting, resulting in improved
NPN Complement is PZT651T1
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
recommended footprint.
A
= 25C (Note 1)
Rating
Rating
(T
C
= 25C unless otherwise noted)
Symbol
Symbol
V
V
V
R
T
P
CEO
CBO
EBO
T
T
I
θJA
stg
C
D
J
L
-- 65 to 150
Value
Value
150
156
260
5.0
2.0
0.8
6.4
60
80
10
1
mW/C
C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Sec
C
C
C
W
†For information on tape and reel specifications,
PZT751T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
PNP SILICON TRANSISTOR
Device
(Note: Microdot may be in either location)
A
Y
W
G
SOT- -223 PACKAGE
ORDERING INFORMATION
SURFACE MOUNT
HIGH CURRENT
BASE
CASE 318E
http://onsemi.com
SOT- -223
STYLE 1
COLLECTOR 2, 4
(Pb--Free)
Package
SOT--223
= Assembly Location
= Year
= Work Week
= Pb--Free Package
1
EMITTER 3
Publication Order Number:
1
1000 / Tape & Reel
MARKING
DIAGRAM
ZT751G
AYW
Shipping
PZT751T1/D
G

Related parts for PZT751T1

PZT751T1 Summary of contents

Page 1

... Pb--Free Package G (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping SOT--223 1000 / Tape & Reel (Pb--Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: PZT751T1/D ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristics OFF CHARACTERISTICS Collector--Emitter Breakdown Voltage ( mAdc Collector--Emitter Breakdown Voltage (I = 100 mAdc Emitter--Base Breakdown Voltage ( mAdc ...

Page 3

NPN 300 270 T = 125C J 240 210 180 25C 150 120 -- 55 100 200 500 1.0 A 2 COLLECTOR CURRENT (mA) C Figure 1. Typical ...

Page 4

... PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 6.3  mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative PZT751T1/D MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 ------ 0.078 0.287 10 ...

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