PZT751T1 ON Semiconductor, PZT751T1 Datasheet - Page 2

• Manufacturer Part Number: PZT751T1
• Description: TRANS SS HC PNP 2A 60V SOT223
• Manufacturer: ON Semiconductor

Specifications of PZT751T1

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 1A, 2V
• Power - Max: 800mW
• Frequency - Transition: 75MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: PZT751T1OSCT

2. Pulse Test: Pulse Width  300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
Collector--Emitter Breakdown Voltage
Collector--Emitter Breakdown Voltage
Emitter--Base Breakdown Voltage
Base--Emitter Cutoff Current
(V
Collector--Base Cutoff Current
(V
DC Current Gain
(I
(I
(I
(I
Collector--Emitter Saturation Voltages
(I
(I
Base--Emitter Voltages
(I
Base--Emitter Saturation Voltage
(I
Current--Gain--Bandwidth
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
C
C
E
EB
CB
= 50 mAdc, V
= 500 mAdc, V
= 1.0 Adc, V
= 2.0 Adc, V
= 2.0 Adc, I
= 1.0 Adc, I
= 1.0 Adc, V
= 1.0 Adc, I
= 50 mAdc, V
= 10 mAdc, I
= 100 mAdc, I
= 10 mAdc, I
= 4.0 Vdc)
= 80 Vdc, I
B
B
B
CE
CE
CE
C
E
B
= 200 mAdc)
= 100 mAdc)
= 100 mAdc)
CE
CE
E
= 0)
= 0)
CE
= 0)
= 2.0 Vdc)
= 2.0 Vdc)
= 2.0 Vdc)
= 0)
= 2.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 2.0 Vdc)
Characteristics
A
= 25C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
I
BE(sat)
BE(on)
h
CBO
EBO
f
FE
T
Min
5.0
60
80
75
75
75
40
75
--
--
--
--
--
--
Max
100
0.1
0.5
0.3
1.0
1.2
--
--
--
--
--
--
--
--
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
--