MMBT2907ALT1 ON Semiconductor, MMBT2907ALT1 Datasheet - Page 5

• Manufacturer Part Number: MMBT2907ALT1
• Description: TRANS SS GP PNP 60V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT2907ALT1

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Power Dissipation Pd: 300mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 300
• No. Of Pins: 3
• C-e Breakdown Voltage: -60V
• Power (ptot): 300mW
• Peak Reflow Compatible (260 C): No
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT2907ALT1OSCT

1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
Figure 13. Base Emitter Voltage vs. Collector
V
CE
−55°C
150°C
25°C
= 1 V
I
C
, COLLECTOR CURRENT (A)
0.01
Current
0.001
0.01
0.1
10
1
0.01
TYPICAL SMALL−SIGNAL Characteristics
Thermal Limit
Single Pulse Test
@ T
0.1
A
= 25°C
Figure 15. Safe Operating Area
0.1
V
CE
http://onsemi.com
NOISE FIGURE
= 10 Vdc, T
V
CE
1
5
1
(Vdc)
1 s
A
100 ms
+0.5
-0.5
-1.0
-1.5
-2.0
-2.5
= 25°C
-0.1 -0.2 -0.5 -1.0 -2.0
0
10
10 ms
Figure 14. Temperature Coefficients
1 ms
I
C
, COLLECTOR CURRENT (mA)
100
R
qVC
-5.0 -10 -20
R
for V
qVB
for V
CE(sat)
BE
-50 -100 -200 -500