MMBT2907ALT1 ON Semiconductor, MMBT2907ALT1 Datasheet
MMBT2907ALT1
Manufacturer Part Number
MMBT2907ALT1
Description
TRANS SS GP PNP 60V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBT2907ALT1G.pdf
(6 pages)
Specifications of MMBT2907ALT1
Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
225mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
PNP
Power Dissipation Pd
300mW
Dc Collector Current
600mA
Dc Current Gain Hfe
300
No. Of Pins
3
C-e Breakdown Voltage
-60V
Power (ptot)
300mW
Peak Reflow Compatible (260 C)
No
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MMBT2907ALT1OSCT
Available stocks
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Part Number
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Quantity
Price
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MMBT2907ALT1
Manufacturer:
ON
Quantity:
7 553
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MMBT2907ALT1
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ON
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2 600
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MMBT2907ALT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
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MMBT2907ALT1G
Manufacturer:
ON
Quantity:
126 000
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MMBT2907ALT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT2907ALT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBT2907ALT1HTSA1
Manufacturer:
INFINEON原装
Quantity:
20 000
MMBT2907ALT1G
General Purpose Transistors
PNP Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 11
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) @T
Derate above 25°C
Substrate, (Note 2) @T
Derate above 25°C
Characteristic
A
Rating
= 25°C
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
I
P
P
CEO
CBO
EBO
, T
I
CM
qJA
qJA
C
D
D
stg
−55 to +150
−1200
Value
−600
−5.0
Max
−60
−60
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT2907ALT1G
MMBT2907ALT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
1
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
Device
ORDERING INFORMATION
2
2F
M
G
MARKING DIAGRAM
BASE
http://onsemi.com
3
1
1
= Device Code
= Date Code*
= Pb−Free Package
Package
(Pb−Free)
(Pb−Free)
SOT−23
COLLECTOR
SOT−23
2F M G
EMITTER
Publication Order Number:
G
SOT−23 (TO−236AB)
3
2
CASE 318
STYLE 6
10,000 Tape & Reel
MMBT2907ALT1/D
3000 Tape & Reel
Shipping
†
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MMBT2907ALT1 Summary of contents
Page 1
... Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT−23 3000 Tape & Reel (Pb−Free) SOT−23 10,000 Tape & Reel (Pb−Free) Publication Order Number: MMBT2907ALT1/D † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note −1.0 mAdc −10 mAdc Collector −Base Breakdown Voltage (I C Emitter −Base Breakdown Voltage (I = ...
Page 3
T = 150°C J 25°C - 55°C 100 10 1.0 -1.0 -0 -1 -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 300 200 t r 100 ...
Page 4
TYPICAL SMALL−SIGNAL Characteristics 10 8.0 = 430 -1.0 mA -500 mA 560 W s - -100 mA 1 ...
Page 5
TYPICAL SMALL−SIGNAL Characteristics 1.2 1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 13. Base Emitter Voltage vs. Collector Current 10 ...
Page 6
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT2907ALT1/D ° ...