BU806 STMicroelectronics, BU806 Datasheet

TRANSISTOR DARL NPN TO-220

BU806

Manufacturer Part Number
BU806
Description
TRANSISTOR DARL NPN TO-220
Manufacturer
STMicroelectronics
Type
Medium Voltage, Power, Switchr
Datasheets

Specifications of BU806

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
1.5V @ 50mA, 5A
Current - Collector Cutoff (max)
100µA
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
200V
Collector-base Voltage(max)
400V
Emitter-base Voltage (max)
6V
Base-emitter Saturation Voltage (max)
2.4@50mA@5AV
Collector-emitter Saturation Voltage
1.5@50mA@5AV
Collector Current (dc) (max)
8A
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Current, Input
2 A
Current, Output
8 A
Power Dissipation
60 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
70
Time, Turn-off Delay
0.4 μs
Time, Turn-on Delay
0.35 μs
Voltage, Collector To Emitter, Saturation
1.5 V
Voltage, Input
6 V
Voltage, Output
200 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Lead Free Status / Rohs Status
Compliant
Other names
497-7197-5
BU806ST

Available stocks

Company
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Manufacturer
Quantity
Price
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Part Number:
BU806 @@@@@@@@@@@
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APPLICATION
DESCRIPTION
The devices are silicon Epitaxial Planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110
ABSOLUTE MAXIMUM RATINGS
October 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPES
NPN DARLINGTONS
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
HORIZONTAL DEFLECTION FOR
MONOCHROME TVs
V
V
V
V
T
P
I
I
CBO
CEO
o
CEV
EBO
I
CM
DM
T
I
stg
C
B
tot
CRT video displays.
j
Collector-base Voltage (I
Collector-emitter Voltage (V
Collector-emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Damper Diode Peak Forward Current
Base Current
Total Power Dissipation at T
Storage Temperature
Max Operating Junction Temperature
®
MEDIUM VOLTAGE NPN FAST SWITCHING
Parameter
C
E
= 0)
= 0)
B
BE
case
= 0)
= -6V)
25
o
C
DARLINGTON TRANSISTORS
INTERNAL SCHEMATIC DIAGRAM
BU806
400
400
200
-65 to 150
Value
150
15
10
60
TO-220
6
8
2
BU807
1
330
330
150
2
3
BU806
BU807
Unit
o
o
W
V
V
V
V
A
A
A
A
C
C
1/4

Related parts for BU806

BU806 Summary of contents

Page 1

... DM I Base Current B P Total Power Dissipation at T tot T Storage Temperature stg T Max Operating Junction Temperature j October 2003 DARLINGTON TRANSISTORS INTERNAL SCHEMATIC DIAGRAM = -6V case BU806 BU807 TO-220 Value BU806 BU807 400 330 400 330 200 150 -65 to 150 150 Unit 1/4 ...

Page 2

... BU806 / BU807 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEV Current (V = -6V Emitter Cut-off EBO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage ...

Page 3

... BU806 / BU807 MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 P011CI 3/4 ...

Page 4

... BU806 / BU807 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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