MMBT3906 STMicroelectronics, MMBT3906 Datasheet
MMBT3906
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MMBT3906 Summary of contents
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... Emitter-Base Voltage (I EBO I Collector Current C P Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j June 2002 SMALL SIGNAL PNP TRANSISTOR Marking 36 INTERNAL SCHEMATIC DIAGRAM = MMBT3906 PRELIMINARY DATA SOT-23 Value Unit - -200 mA 350 mW o -65 to 150 C o 150 C 1/4 ...
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... MMBT3906 THERMAL DATA R Thermal Resistance Junction-Ambient thj-amb Device mounted on a PCB area ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEX Current ( Collector Cut-off BEX Current ( Collector-Emitter (BR)CEO Breakdown Voltage ( Collector-Base (BR)CBO Breakdown Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter ...
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... MIN. 1.1 33.4 0.95 25.6 1.4 47.2 3 110.2 1.05 37.4 2.05 74.8 2.5 82.6 0.48 14.9 0.6 11.8 0.1 0.65 11.8 0.17 MMBT3906 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 0 3.9 25.6 3.5 6.7 0044616/B 3/4 ...
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... MMBT3906 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...