BC368,126 NXP Semiconductors, BC368,126 Datasheet
![TRANSISTOR NPN 20V 1A TO-92](/photos/5/62/56201/568-to-92_t_r_amo_sml.jpg)
BC368,126
Specifications of BC368,126
BC368 AMO
BC368 AMO
Related parts for BC368,126
BC368,126 Summary of contents
Page 1
DATA SHEET dbook, halfpage M3D186 BC368 NPN medium power transistor Product data sheet Supersedes data of 2003 Dec 01 DISCRETE SEMICONDUCTORS 2004 Nov 05 ...
Page 2
... NXP Semiconductors NPN medium power transistor FEATURES • High current. APPLICATIONS • Linear voltage regulators • Low side switch • Supply line switch for negative voltages • MOSFET driver • Audio (pre-) amplifier. PRODUCT OVERVIEW TYPE NUMBER PHILIPS BC368 SOT54 SIMPLIFIED OUTLINE, SYMBOL AND PINNING ...
Page 3
... NXP Semiconductors NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I output current (DC peak collector current CM I peak collector current BM P total power dissipation ...
Page 4
... NXP Semiconductors NPN medium power transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th(j-a) Notes 1. Refer to SOT54 (SC-43A) standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint handbook, full pagewidth Z th (K/W) (1) ( (3) (4) (5) (6) 10 ...
Page 5
... NXP Semiconductors NPN medium power transistor CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat V base-emitter voltage BE C collector capacitance c f transition frequency T 2.4 handbook, halfpage ...
Page 6
... NXP Semiconductors NPN medium power transistor handbook, halfpage −4 −3 − Fig.5 DC current gain as a function of collector current; typical values. 2004 Nov 05 MLE327 handbook, halfpage − ( CEsat (V) −1 10 −2 10 −3 10 −4 −3 −2 − 10 Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. ...
Page 7
... NXP Semiconductors NPN medium power transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. ...
Page 8
... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
Page 9
... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...