PBSS9110S,126 NXP Semiconductors, PBSS9110S,126 Datasheet - Page 3

• Manufacturer Part Number: PBSS9110S,126
• Description: TRANS PNP 100V 1A LOW SAT TO92
• Manufacturer: NXP Semiconductors

Specifications of PBSS9110S,126

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 320mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 830mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057673126; PBSS9110S AMO; PBSS9110S AMO

NXP Semiconductors
5. Limiting values
PBSS9110S_3
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
V
V
V
I
I
I
P
T
T
T
CM
C
B
Fig 1.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
(1) 1cm
(2) Standard footprint
Power derating curves
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
collector current (DC)
base current (DC)
total power dissipation
junction temperature
operating ambient
temperature
storage temperature
2
collector mounting pad
Rev. 03 — 22 November 2009
(mW)
P
1000
tot
800
600
400
200
0
0
(1)
(2)
40
Conditions
open emitter
open base
open collector
T
T
j(max)
amb
100 V, 1 A PNP low V
80
≤ 25 °C
120
T
amb
[1]
001aaa816
(°C)
-
-
-
-
-
Min
-
-
-
−65
−65
160
PBSS9110S
CEsat
Max
−120
−100
−5
−3
−1
−0.3
830
150
+150
+150
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Unit
V
V
V
A
A
A
mW
°C
°C
°C
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