MPSA92,412 NXP Semiconductors, MPSA92,412 Datasheet - Page 2

• Manufacturer Part Number: MPSA92,412
• Description: TRANS PNP 300V 500MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of MPSA92,412

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933431190412; MPSA92P; MPSA92P

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: MPSA42.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Aug 20
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP high-voltage transistor
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
2
open emitter
open base
open collector
T
amb
PINNING
handbook, halfpage
Fig.1
CONDITIONS
≤ 25 °C
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
collector
base
emitter
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
−300
−300
−5
−100
−200
−100
625
+150
150
+150
MAM280
Product data sheet
MAX.
MPSA92
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1
3