PZT3906,115 NXP Semiconductors, PZT3906,115 Datasheet - Page 2

• Manufacturer Part Number: PZT3906,115
• Description: TRANS PNP SW 40V 100MA SOT-223
• Manufacturer: NXP Semiconductors

Specifications of PZT3906,115

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 1.05W
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-1183-2; 933975350115; PZT3906 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT3904.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 14
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
Low current (max. 100 mA)
Low voltage (max. 40 V).
High-speed switching.
CBO
CEO
EBO
tot
PNP switching transistor
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
open emitter
open base
open collector
T
amb
2
PINNING
handbook, halfpage
25 C; note 1
CONDITIONS
PIN
2, 4
Fig.1 Simplified outline (SOT223) and symbol.
1
3
Top view
base
collector
emitter
1
2
4
3
DESCRIPTION
65
65
MIN.
MAM288
Product specification
1
1.05
+150
150
+150
40
40
6
100
200
100
MAX.
PZT3906
2, 4
3
V
V
V
mA
mA
mA
W
2
C
C
C
.
UNIT