MT46V128M8P-6T:A Micron Technology Inc, MT46V128M8P-6T:A Datasheet - Page 65
![DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V128M8P-6T:A
Manufacturer Part Number
MT46V128M8P-6T:A
Description
DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V128M8P-6T:A
Density
1 Gb
Maximum Clock Rate
333 MHz
Package
66TSOP
Address Bus Width
16 Bit
Operating Supply Voltage
2.5 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (128M x 8)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Package / Case
66-TSOP
Organization
128Mx8
Address Bus
16b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
230mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 36:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Command
Address
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
DI
b
65
NOP
DI
T1
b
DI
b
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T2
T2n
1Gb: x4, x8, x16 DDR SDRAM
NOP
T3
Don’t Care
©2003 Micron Technology, Inc. All rights reserved.
Operations