MT46H32M16LFBF-6 IT:C Micron Technology Inc, MT46H32M16LFBF-6 IT:C Datasheet - Page 63
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MT46H32M16LFBF-6 IT:C
Manufacturer Part Number
MT46H32M16LFBF-6 IT:C
Description
DRAM CHIP DDR SDRAM 512MBIT 1.8V 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H32M16LFBF-6_ITC.pdf
(95 pages)
Specifications of MT46H32M16LFBF-6 IT:C
Lead Free Status / Rohs Status
Compliant
- Current page: 63 of 95
- Download datasheet (4Mb)
Figure 25: Random Read Accesses
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. C 1/11 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous).
3. READs are to an active row in any bank.
4. Shown with nominal
OUT
CL = 2
n (or x, b, g) = data-out from column n (or column x, column b, column g).
READ
Bank,
READ
Bank,
Col x
Col x
T1
T1
CL = 3
T1n
T1n
D
t
n
OUT
AC,
READ
Bank,
READ
Bank,
Col b
Col b
T2
T2
1
63
t
DQSCK, and
D
n + 1
T2n
T2n
OUT
512Mb: x16, x32 Mobile LPDDR SDRAM
D
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n
READ
READ
Bank,
Bank,
Col g
Col g
T3
T3
OUT
x
t
DQSQ.
D
n + 1
Don’t Care
T3n
T3n
D
x + 1
OUT
OUT
D
OUT
D
T4
T4
NOP
NOP
x
OUT
b
D
x + 1
T4n
T4n
OUT
D
b + 1
OUT
© 2009 Micron Technology, Inc. All rights reserved.
Transitioning Data
READ Operation
D
T5
T5
NOP
NOP
D
OUT
b
OUT
g
T5n
T5n
D
b + 1
D
g + 1
OUT
OUT
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