MJW18020G ON Semiconductor, MJW18020G Datasheet - Page 4

• Manufacturer Part Number: MJW18020G
• Description: TRANS PWR NPN 20A 450V TO-247
• Manufacturer: ON Semiconductor

Specifications of MJW18020G

• Transistor Type: NPN
• Current - Collector (ic) (max): 30A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 4A, 20A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 3A, 5V
• Power - Max: 250W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 1000 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 30 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 30 A
• Dc Collector/base Gain Hfe Min: 14
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
100
1
C
C
V
ob
ib
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
40
30
20
10
0
10
0
Figure 9. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS
200
http://onsemi.com
V
400
BE
= 0 V
100
4
100.00
10.00
600
1.00
0.10
0.01
−1.5 V
10
T
I
L
c
DC
C
C
/I
b
Figure 8. Forward Bias Safe Operating Area
V
= 500 mH
v 125°C
> 4
CE
800
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
−5 V
5 ms
1 ms
1000
100
Extended SOA
1.0 ms
10 ms
1000