MJW18020G ON Semiconductor, MJW18020G Datasheet - Page 2

• Manufacturer Part Number: MJW18020G
• Description: TRANS PWR NPN 20A 450V TO-247
• Manufacturer: ON Semiconductor

Specifications of MJW18020G

• Transistor Type: NPN
• Current - Collector (ic) (max): 30A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 4A, 20A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 3A, 5V
• Power - Max: 250W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 1000 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 30 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 30 A
• Dc Collector/base Gain Hfe Min: 14
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 ms)
SWITCHING CHARACTERISTICS: Inductive Load (V
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current (V
Emitter Cutoff Current
DC Current Gain
Base−Emitter Saturation Voltage (I
Collector−Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Turn−On Time
Storage Time
Fall Time
Turn−Off Time
Turn−On Time
Storage Time
Fall Time
Turn−Off Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
(I
(V
(V
(I
(I
(I
(V
(V
(T
C
C
C
C
CE
CE
CB
EB
C
= 100 mAdc, I
= 10 Adc, I
= 20 Adc, I
= 1 Adc, V
= 125°C)
= 8.0)
= Rated V
= 9 Vdc, I
= 10 Vdc, I
CE
B
B
C
CEO
= 2 Adc)
= 4 Adc)
E
(I
(I
(I
(I
= 0)
= 10 Vdc, f
B
C
C
C
C
= 0, f
= 0)
, I
= 3 Adc, V
= 10 Adc V
= 20 Adc V
= 10 mAdc V
B
CE
= 0)
test
= Rated V
= 1 MHz)
Characteristic
test
(I
CE
CE
CE
= 1 MHz)
C
C
CE
= 10 Adc, I
= 20 Adc, I
= 5 Vdc)
= 2 Vdc)
= 2 Vdc)
CES
= 5 Vdc)
(T
C
, V
(I
(I
(I
(I
C
C
C
C
= 25°C unless otherwise noted)
EB
= 20 Adc, I
= 10 Adc, I
= 10 Adc, I
= 20 Adc, I
B
B
= 0)
= 2 Adc)
= 4 Adc)
Vcc = 125 V)
Vcc = 125 V)
clamp
http://onsemi.com
(T
(T
(T
(T
(T
B1
B1
B1
B1
C
C
C
C
C
= 300 V , Vcc = 15 V, L = 200 mH)
= I
= I
= I
= I
= 125°C)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
B2
B2
B2
B2
= 4 Adc,
= 4 Adc)
= 2 Adc,
= 2 Adc)
2
V
Symbol
V
V
CEO(sus)
CE(sat)
I
I
I
BE(sat)
C
CEO
h
CES
EBO
C
t
t
t
t
t si
t si
f
On
Off
On
Off
t fi
t c
t fi
t c
t
t
FE
t
t
T
ob
s
s
ib
f
f
Min
450
5.5
14
14
−
−
−
−
8
5
4
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
7000
0.97
1.15
4.75
3.25
4.75
Typ
300
540
380
965
350
142
320
350
500
0.2
0.3
0.5
0.9
5.2
2.9
3.0
30
16
14
25
13
−
−
−
−
9
7
9000
1200
Max
1.25
100
100
100
500
750
500
500
250
500
500
750
500
1.5
0.6
1.5
2.0
6.5
3.5
3.5
34
−
−
−
−
−
−
−
−
6
4
6
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
pF
pF
ns
ms
ns
ms
ns
ms
ns
ms
ns
ms
ns
ns
ms
ns