MJE18002G ON Semiconductor, MJE18002G Datasheet - Page 6

• Manufacturer Part Number: MJE18002G
• Description: TRANS PWR NPN 2A 450V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18002G

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 1A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 200mA, 5V
• Power - Max: 50W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE18002GOS

10.00
1.00
0.10
0.01
180
160
140
120
100
1.0
0.8
0.6
0.4
0.2
0.0
80
60
10
10
20
20
5
5
DC (MJE18002)
Figure 15. Forward Bias Safe Operating Area
6
6
Figure 17. Forward Bias Power Derating
40
40
V
CE
T
T
7
7
5 ms
J
J
Figure 13. Inductive Fall Time
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
= 25°C
= 125°C
60
60
T
8
8
C
, CASE TEMPERATURE (°C)
1 ms
h
I
C
FE
9
9
= 0.4 A
, FORCED GAIN
80
80
GUARANTEED SAFE OPERATING AREA INFORMATION
100
100
10
10
DERATING
THERMAL
100
100
TYPICAL SWITCHING CHARACTERISTICS
11
11
50 ms
12
12
120
120
10 ms
(I
I
V
V
L
B(off)
BREAKDOWN
C
CC
Z
13
13
B2
DERATING
= 300 V
= 200 mH
SECOND
= 15 V
140
= I
140
I
= I
C
1 ms
C
= 1 A
14
14
/2
http://onsemi.com
C
/2 for all switching)
1000
1000
160
160
15
15
6
250
230
210
190
170
150
130
110
Figure 16. Reverse Bias Switching Safe Operating Area
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate I
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate. The
data of Figure 15 is based on T
depending on power level. Second breakdown pulse limits are valid
for duty cycles to 10% but must be derated when T
breakdown limitations do not derate the same as thermal limitations.
Allowable current at the voltages shown on Figure 15 may be found
at any case temperature by using the appropriate curve on Figure 17.
T
temperatures, thermal limitations will reduce the power that can be
handled to values less the limitations imposed by second
breakdown. For inductive loads, high voltage and current must be
sustained simultaneously during turn−off with the base to emitter
junction reverse biased. The safe level is specified as a reverse
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an
avalanche mode.
2.5
2.0
1.5
1.0
0.5
0.0
90
70
50
J
(pk) may be calculated from the data in Figures 20. At any case
0
5
0
There are two limitations on the power handling ability of a
5
6
6
I
C
Figure 14. Inductive Crossover Time
200
200
= 0.4 A
V
CE
7
T
T
7
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
J
J
I
= 25°C
= 125°C
C
= 1 A
8
8
400
400
h
FE
9
9
, FORCED GAIN
0 V
600
600
10
10
C
C
11
11
= 25°C; T
−V
800
800
CE
12
12
limits of the transistor
T
I
L
V
I
V
V
L
C
B(off)
C
C
C
BE(off)
CC
Z
/I
J
13
13
C
B
= 500 mH
≤ 125°C
(pk) is variable
= 300 V
= 200 mH
1000
1000
> 25°C. Second
= 15 V
≥ 4
= I
-1.5 V
= 0.5 V
C
14
/2
14
1200
1200
15
15