MJE18002G ON Semiconductor, MJE18002G Datasheet - Page 4

• Manufacturer Part Number: MJE18002G
• Description: TRANS PWR NPN 2A 450V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18002G

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 1A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 200mA, 5V
• Power - Max: 50W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE18002GOS

100
0.001
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.01
0.01
10
0.001
0.01
0.01
1
2
1
0
T
T
T
J
J
J
T
T
= 25°C
= 125°C
= 125°C
J
J
Figure 5. Base−Emitter Saturation Region
= 25°C
= 25°C
Figure 3. Collector Saturation Region
Figure 1. DC Current Gain @ 1 Volt
I
C
I
I
C
= 0.2 A
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
0.010
0.10
0.10
0.010
I
0.10
0.10
B
, BASE CURRENT (mA)
0.4 A
0.100
1 A
1.00
1.00
0.100
1.00
1.00
V
1.5 A
CE
= 1 V
TYPICAL STATIC CHARACTERISTICS
I
I
C
C
/I
/I
B
B
http://onsemi.com
= 10
= 5
2 A
10.00
10.00
1.000
10.00
1.000
10.00
4
10.00
1000
1.00
0.10
0.01
100
100
10
10
0.01
0.01
1
0.01
1
0.01
1
1
Figure 4. Collector−Emitter Saturation Voltage
T
I
T
C
I
J
C
J
/I
/I
= 125°C
= - 20°C
B
B
= 10
= 5
Figure 2. DC Current Gain @ 5 Volts
V
I
I
CE
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR-EMITTER (VOLTS)
Figure 6. Capacitance
T
0.10
0.10
0.10
0.10
10
10
J
= 25°C
C
ib
1.00
1.00
1.00
1.00
100
100
V
CE
T
T
= 5 V
J
J
T
f = 1 MHz
= 25°C
= 125°C
J
= 25°C
C
ob
10.00
10.00
10.00
10.00
1000
1000