NSS40600CF8T1G ON Semiconductor, NSS40600CF8T1G Datasheet

NSS40600CF8T1G

Manufacturer Part Number

NSS40600CF8T1G

Description

TRANSISTOR PNP 6A 40V 8CHIPFET

Manufacturer

ON Semiconductor

Datasheet

1.NSS40600CF8T1G.pdf (5 pages)

Specifications of NSS40600CF8T1G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

220mV @ 400mA, 4A

Current - Collector Cutoff (max)

10µA

Dc Current Gain (hfe) (min) @ Ic, Vce

220 @ 1A, 2V

Power - Max

830mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

8-ChipFET™

Configuration

Single Hex Collector

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

7 V

Continuous Collector Current

- 6 A

Maximum Dc Collector Current

6 A

Power Dissipation

830 mW

Maximum Operating Frequency

100 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

250

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NSS40600CF8T1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 5
Download datasheet (129Kb)

NSS40600CF8T1G

40 V, 7.0 A, Low V

PNP Transistor

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ 100 mm

2. FR−4 @ 500 mm

3. Thermal response.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

November, 2009 − Rev. 2

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current − Continuous

Collector Current − Peak

Electrostatic Discharge

Total Device Dissipation, T

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation, T

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Thermal Resistance,

Junction−to−Lead #1

Total Device Dissipation

(Single Pulse < 10 sec)

Junction and Storage

Temperature Range

ON Semiconductor’s e

Typical applications are DC−DC converters and power management

This is a Pb−Free Device

Characteristic

Rating

, 1 oz copper traces.

CE(sat)

= 25°C)

= 25°C

) and high current gain capability. These

PowerEdge family of low V

(Notes 2 & 3)

qJA

qJL

Symbol

(Note 1)

(Note 2)

ESD

Dsingle

(Note 1)

(Note 2)

CEO

CBO

EBO

, T

PowerEdge devices to be

stg

CE(sat)

−55 to

+150

HBM Class 3B

Max

−7.0

−6.0

−7.0

Max

11.1

2.75

−40

830

150

6.7

1.4

MM Class C

mW/°C

°C/W

CE(sat)

Unit

Vdc

Adc

°C

†For information on tape and reel specifications,

NSS40600CF8T1G

PNP LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

EQUIVALENT R

Device

−40 VOLTS, 7.0 AMPS

ORDERING INFORMATION

BASE

MARKING DIAGRAM

VA = Specific Device Code

M = Month Code

G = Pb−Free Package

PIN CONNECTIONS

http://onsemi.com

CE(sat)

COLLECTOR

1, 2, 3, 6, 7, 8

(Pb−Free)

VA M

Package

ChipFET

EMITTER

Publication Order Number:

DS(on)

TRANSISTOR

CASE 1206A

ChipFET]

STYLE 4

NSS40600CF8/D

Tape & Reel

45 mW

Shipping

3000/

†

Related parts for NSS40600CF8T1G

NSS40600CF8T1G Summary of contents

Page 1

... PIN CONNECTIONS ORDERING INFORMATION Device Package Shipping NSS40600CF8T1G ChipFET 3000/ (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS40600CF8/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mAdc Collector −Base Breakdown Voltage (I = −0.1 mAdc Emitter −Base Breakdown Voltage (I = −0.1 mAdc, I ...

Page 3

0.20 0.15 0.10 0.05 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 750 150° 650 550 150° 450 ...

Page 4

V , EMITTER BASE VOLTAGE (V) EB Figure 7. Input Capacitance 10 1.0 0.1 0.01 0.01 225 C (pF) ibo 200 175 150 125 100 75 ...

Page 5

... SCALE 20:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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