BDP 949 E6327 Infineon Technologies, BDP 949 E6327 Datasheet
BDP 949 E6327
Specifications of BDP 949 E6327
BDP949E6327INTR
BDP949E6327XT
SP000010932
Related parts for BDP 949 E6327
BDP 949 E6327 Summary of contents
Page 1
Silicon NPN Transistors • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP948, BDP950, BDP954 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ...
Page 2
Maximum Ratings Parameter Collector-emitter voltage BDP947 BDP949 BDP953 Collector-base voltage BDP947 BDP949 BDP953 Emitter-base voltage Collector current ≤ Peak collector current Base current ≤ Peak base current Total power dissipation- ≤ 100 ...
Page 3
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BDP947 mA BDP949 mA ...
Page 4
I DC current gain 100°C - 25°C -55° Base-emitter saturation voltage ...
Page 5
Collector cutoff current I CBO max Total power dissipation P 5.5 W 4.5 4 3.5 ...
Page 6
Permissible Pulse Load = ƒ totmax totDC 0.005 0.01 0.02 0.05 0.1 0.2 ...
Page 7
Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...
Page 8
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...