NSS20201MR6T1G ON Semiconductor, NSS20201MR6T1G Datasheet - Page 3

• Manufacturer Part Number: NSS20201MR6T1G
• Description: TRANSISTOR NPN 2A 20V TSOP-6
• Manufacturer: ON Semiconductor

Specifications of NSS20201MR6T1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 5V
• Power - Max: 460mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NSS20201MR6T1G; NSS20201MR6T1GOSTR

0.05 (0.002)
S
G
H
6
L
1
A
5
2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.075
1.9
3
4
D
0.037
0.037
0.95
0.95
C
B
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
NSS20201MR6T1G
http://onsemi.com
CASE 318G−02
K
ISSUE N
TSOP−6
0.094
3
J
2.4
M
SCALE 10:1
0.039
1.0
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
4. DIMENSIONS A AND B DO NOT INCLUDE
0.028
0.7
ANSI Y14.5M, 1982.
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
STYLE 6:
DIM
M
A
B
C
D
G
H
K
S
PIN 1. COLLECTOR
J
L
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
0.013
MILLIMETERS
MIN
2.90
1.30
0.90
0.25
0.85
0.10
0.20
1.25
2.50
0
_
0.100
MAX
3.10
1.70
1.10
0.50
1.05
0.26
0.60
1.55
3.00
10
_
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0.0985 0.1181
0.1142 0.1220
MIN
0
INCHES
_
MAX
10
_