NSS20201MR6T1G ON Semiconductor, NSS20201MR6T1G Datasheet

NSS20201MR6T1G

Manufacturer Part Number

NSS20201MR6T1G

Description

TRANSISTOR NPN 2A 20V TSOP-6

Manufacturer

ON Semiconductor

Datasheet

1.NSS20201MR6T1G.pdf (4 pages)

Specifications of NSS20201MR6T1G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

20V

Vce Saturation (max) @ Ib, Ic

150mV @ 100mA, 1A

Current - Collector Cutoff (max)

100nA

Dc Current Gain (hfe) (min) @ Ic, Vce

200 @ 1A, 5V

Power - Max

460mW

Frequency - Transition

200MHz

Mounting Type

Surface Mount

Package / Case

SC-74-6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NSS20201MR6T1G
NSS20201MR6T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS20201MR6T1G

Manufacturer:

ON Semiconductor

Quantity:

4 600

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS20201MR6T1G

Manufacturer:

Quantity:

30 000

Current page: 1 of 4
Download datasheet (48Kb)

NSS20201MR6T1G

20 V, 3 A, Low V

NPN Transistor

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ 100 mm2, 2 oz copper traces.

2. FR−4 @ 500 mm2, 2 oz copper traces.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

January, 2006 − Rev. 0

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current − Continuous

Collector Current − Peak

Total Device Dissipation

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Thermal Resistance,

Junction−to−Lead #1

Total Device Dissipation

(Single Pulse < 10 s)

Junction and Storage

Temperature Range

ON Semiconductor’s e

Typical application are DC−DC converters and power management

= 25°C

Characteristic

Rating

CE(sat)

= 25°C)

) and high current gain capability. These

PowerEdge family of low V

qJA

qJL

Symbol

(Note 2)

(Note 1)

(Note 2)

Dsingle

(Note 1)

(Note 2)

(Note 1)

(Note 2)

CEO

CBO

, T

EBO

CE(sat)

stg

PowerEdge devices to be

−55 to

+150

Max

460

272

780

160

5.0

2.0

3.0

3.7

6.3

1.5

mW/°C

°C/W

CE(sat)

Unit

°C

NSS20201MR6T1G

†For information on tape and reel specifications,

NPN LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

EQUIVALENT R

Device

VS0

(Note: Microdot may be in either location)

ORDERING INFORMATION

BASE

= Specific Device Code

= Date Code

= Pb−Free Package

DEVICE MARKING

http://onsemi.com

20 VOLTS

3.0 AMPS

COLLECTOR

CE(sat)

CASE 318G

STYLE 6

EMITTER

TSOP−6

1, 2, 5, 6

VS0 MG

(Pb−Free)

Package

TSOP−6

Publication Order Number:

DS(on)

TRANSISTOR

3000/Tape & Reel

NSS20201MR6/D

100 mW

Shipping

†

Related parts for NSS20201MR6T1G

NSS20201MR6T1G Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NSS20201MR6T1G TSOP−6 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

... Base −Emitter Turn−on Voltage (Note 1 2 Cutoff Frequency (I = 100 mA 5 100 MHz C CE Output Capacitance (f = 1.0 MHz) 3. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. NSS20201MR6T1G (T = 25°C unless otherwise noted http://onsemi.com 2 Symbol Min Typ Max (BR)CEO 20 − ...

Page 3

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NSS20201MR6T1G TSOP−6 CASE 318G−02 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. ...

Page 4

... P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NSS20201MR6T1G N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2− ...

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