BCX 69-16 E6327 Infineon Technologies, BCX 69-16 E6327 Datasheet

TRANS PNP AF 20V SOT-89

BCX 69-16 E6327

Manufacturer Part Number
BCX 69-16 E6327
Description
TRANS PNP AF 20V SOT-89
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCX 69-16 E6327

Package / Case
SOT-89
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 500mA, 1V
Power - Max
3W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
100 MHz
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BCX6916
BCX6916E6327
BCX6916E6327XT
BCX6916INTR
BCX6916XTINTR
BCX6916XTINTR
SP000010929
PNP Silicon AF Transistors
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX68 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
BCX69-10
BCX69-16
BCX69-25
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, t
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R
S
= 114 °C
thJA
please refer to Application Note Thermal Resistance
p
2)
≤ 10 ms
Marking
CF
CG
CH
1)
1=B
1=B
1=B
1
Pin Configuration
Symbol
V
V
V
I
I
I
I
P
T
T
Symbol
R
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
2=C
2=C
2=C
3=E
3=E
3=E
3
2
-65 ... 150
1
Value
Value
≤ 12
100
200
150
20
25
5
1
2
3
Package
SOT89
SOT89
SOT89
2008-10-10
BCX69...
Unit
V
A
mA
W
°C
Unit
K/W
2

Related parts for BCX 69-16 E6327

BCX 69-16 E6327 Summary of contents

Page 1

PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX68 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type BCX69-10 BCX69-16 ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base breakdown voltage µ ...

Page 3

... Collector-emitter saturation voltage C = ƒ EHP00475 Ι Ι C Collector current EHP00472 10 mA Ι 0.8 1.0 1 sat CEsat FE BCX 100 ˚C 25 ˚C 2 -50 ˚ 0.2 0.4 0.6 = ƒ BCX ˚C 100 25 ˚C -50 ˚ 0.2 0.4 0.6 0.8 2008-10-10 BCX69... EHP00473 V 0 sat EHP00474 1.0 1 ...

Page 4

... Total power dissipation P 3.5 W 2.5 2 1 ƒ Transition frequency EHP00471 3 10 MHz 5 max typ 100 ˚C 150 ƒ Permissible Pulse Load R tot °C 90 105 120 150 ƒ BCX ƒ (t thJS 0,5 0,2 0,1 0 0,05 0,02 0,01 0,005 2008-10-10 BCX69... EHP00469 Ι ...

Page 5

Permissible Pulse Load = ƒ totmax totDC 0.005 0.01 0.02 0.05 0.1 0.2 0.5 -2 ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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