BSP 51 E6327 Infineon Technologies, BSP 51 E6327 Datasheet - Page 5

• Manufacturer Part Number: BSP 51 E6327
• Description: TRANSISTOR DARL NPN 60V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP 51 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.8V @ 1mA, 1A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 1 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSP51E6327XT; SP000011127

DC current gain h
V
h
Base-emitter saturation voltage
I
C
FE
CE
C
=
mA
10
10
10
10
10
10
10
= 10 V
5
5
5
5
5
5
4
3
2
3
2
1
(V
10
0
BSP 50...52
BSP 50...52
BEsat
1
), I
B
= 0.5 mA
B
10
= Parameter
FE
1
2
=
(I
C
4 mA
)
10
2
3
EHP00661
EHP00664
mA
V
C
V
BE sat
10
3
4
5
f
Collector-emitter saturation voltage
I
Transition frequency f
V
C
T
C
CE
MHz
= (V
mA
10
10
10
10
10
10
5
5
5
= 5 V, f = 100 MHz
3
2
1
3
2
1
10
BSP 50...52
0
BSP 50...52
CEsat
1
), I
4 mA
B
= Parameter
5
10
T
1
=
2
BSP50-BSP52
B
(I
= 0.5 mA
C
)
2007-03-30
mA
EHP00662
EHP00663
C
V
V
CE sat
10
2
3