BCP 49 E6327 Infineon Technologies, BCP 49 E6327 Datasheet - Page 3

• Manufacturer Part Number: BCP 49 E6327
• Description: TRANSISTOR DARL NPN AF SOT-223
• Manufacturer: Infineon Technologies

Specifications of BCP 49 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1.5W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCP49E6327XT; SP000010685

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter saturation voltage1)
I
Base-emitter saturation voltage 1)
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1) Pulse test: t 300 s, D = 2%
C
C
C
CB
= 100 mA, I
= 100 mA, I
= 50 mA, V
= 10 V, f = 1 MHz
CE
B
B
= 0.1 mA
= 0.1 mA
= 5 V, f = 100 MHz
A
= 25°C, unless otherwise specified.
3
Symbol
V
V
f
C
T
CEsat
BEsat
cb
min.
-
-
-
-
Values
typ.
200
6.5
-
-
max.
1.5
1
2007-04-27
-
-
BCP49
Unit
V
MHz
pF