BCX 53-10 E6327 Infineon Technologies, BCX 53-10 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCX 53-10 E6327
• Description: TRANS PNP AF 80V SOT-89
• Manufacturer: Infineon Technologies

Specifications of BCX 53-10 E6327

• Package / Case: SOT-89
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 125 MHz
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BCX5310; BCX5310E6327; BCX5310E6327XT; BCX5310INTR; BCX5310XTINTR; BCX5310XTINTR; SP000010908

DC current gain h
V
Base-emitter saturation voltage
I
Ι
h
C
C
CE
FE
= ƒ (V
mA
10
10
10
10
10
10
10
10
10
5
5
5
= 2 V
5
5
5
1
4
3
2
0
3
2
1
0
10
0
BCX 51...53
BCX 51...53
100
0
-50
BEsat
25
˚C
˚C
˚C
0.2
5
), h
10
FE
1
0.4
FE
= 10
100
-50
25
5
= ƒ (I
10
˚C
˚C
˚C
0.6
2
C
)
0.8
5
10
Ι
V
3
C
1.0
BE sat
EHP00440
EHP00443
mA
V
10
1.2
4
4
Ι
Collector-emitter saturation voltage
I
Collector current I
V
Ι
C
C
C
CE
= ƒ (V
mA
mA
10
10
10
10
10
10
10
10
10
10
10
10
10
5
5
5
5
= 2V
5
5
1
4
3
2
0
4
3
2
1
0
0
0
BCX 51...53
BCX 51...53
CEsat
0.2
), h
0.2
FE
100
0.4
-50
25
= 10
C
100
-50
˚C
˚C
˚C
25
BCX51...-BCX53...
= ƒ (V
˚C
˚C
˚C
0.4
0.6
BE
)
0.8
2008-10-10
0.6
V
V
CE sat
1.0
BE
EHP00441
EHP00437
V
V
0.8
1.2