BCV 26 E6327 Infineon Technologies, BCV 26 E6327 Datasheet - Page 5
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BCV 26 E6327
Manufacturer Part Number
BCV 26 E6327
Description
TRANSISTOR DARL PNP AF SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BCV46E6327.pdf
(8 pages)
Specifications of BCV 26 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
360mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
4000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BCV26E6327XT
SP000010874
SP000010874
DC current gain h
V
Base-emitter saturation voltage
I
h
C
C
FE
CE
=
mA
10
10
10
10
10
10
10
10
5
5
5
5
5
= 5 V
10
3
2
1
0
6
5
4
3
(V
0
BCV 26/46
BCV 26/46
-1
BEsat
), h
10
0
125
-55 ˚C
FE
25 ˚C
1.0
FE
˚C
= 1000
=
10
1
(I
C
)
150
2.0
-50 ˚C
25 ˚C
10
˚C
2
V
BEsat
C
V
EHP00298
EHP00295
mA
10
3.0
3
5
Collector-emitter saturation voltage
I
Collector cutoff current I
V
C
C
CBO
CB
= (V
mA
10
10
10
10
nA
10
10
10
10
10
5
5
= V
3
2
1
0
4
3
2
1
0
0
BCV 26/46
0
CEsat
BCV 26/46
CEmax
), h
FE
0.5
50
= 1000
max
BCV26, BCV46
CBO
typ
100
1.0
=
2007-04-20
150
V
-50 ˚C
T
25 ˚C
(T
A
CEsat
˚C
EHP00296
V
EHP00297
˚C
A
)
150
1.5