BCV 26 E6327 Infineon Technologies, BCV 26 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCV 26 E6327
• Description: TRANSISTOR DARL PNP AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCV 26 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 360mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 4000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BCV26E6327XT; SP000010874

Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
C
CB
= 50 mA, V
= 10 V, f = 1 MHz
CE
= 5 V, f = 100 MHz
A
= 25°C, unless otherwise specified
4
Symbol
f
C
T
cb
min.
-
-
Values
typ.
200
4.5
BCV26, BCV46
max.
2007-04-20
-
-
Unit
MHz
pF