MMBT5087LT1G ON Semiconductor, MMBT5087LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT5087LT1G
• Description: TRANS GP SS PNP LN 50V SOT23
• Manufacturer: ON Semiconductor
• Type: Low Noiser

Specifications of MMBT5087LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100µA, 5V
• Power - Max: 225mW
• Frequency - Transition: 40MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: - 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 40 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250 at 0.1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -50 mA
• Current, Gain: 250
• Frequency: 40 MHz
• Package Type: SOT-23
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -50 V
• Voltage, Collector To Base: -50 V
• Voltage, Collector To Emitter: -50 V
• Voltage, Collector To Emitter, Saturation: -0.3 V
• Voltage, Emitter To Base: -3 V
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 250
• Frequency (max): 40MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5087LT1GOS; MMBT5087LT1GOS; MMBT5087LT1GOSTR

1.0 M
500 k
200 k
100 k
1.0 M
500 k
200 k
100 k
5.0 k
2.0 k
1.0 k
5.0 k
2.0 k
1.0 k
50 k
20 k
10 k
50 k
20 k
10 k
200
200
500
100
500
100
10
10
0.5 dB
20
20
Figure 3. Narrow Band, 100 Hz
30
30
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
Figure 5. Wideband
50 70 100
50 70 100
0.5 dB
1.0 dB
200 300
200 300
BANDWIDTH = 1.0 Hz
10 Hz to 15.7 kHz
NOISE FIGURE CONTOURS
1.0 dB
2.0 dB
(V
3.0 dB
2.0 dB
5.0 dB
CE
500 700 1.0 k
500 700 1.0 k
3.0 dB
5.0 dB
http://onsemi.com
= − 5.0 Vdc, T
3
1.0 M
500 k
200 k
100 k
Noise Figure is Defined as:
NF + 20 log 10
e
I
K
T
R
5.0 k
2.0 k
1.0 k
n
50 k
20 k
10 k
n
500
200
100
S
A
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
10
= 25°C)
20
Figure 4. Narrow Band, 1.0 kHz
e n 2 ) 4KTR S ) I n 2 R S 2
30
I
C
, COLLECTOR CURRENT (mA)
50 70 100
4KTR S
0.5 dB
−23
j/°K)
200 300
BANDWIDTH = 1.0 Hz
1 2
2.0 dB
3.0 dB
1.0 dB
500 700 1.0 k
5.0 dB