MMBT5087LT1G ON Semiconductor, MMBT5087LT1G Datasheet - Page 3
MMBT5087LT1G
Manufacturer Part Number
MMBT5087LT1G
Description
TRANS GP SS PNP LN 50V SOT23
Manufacturer
ON Semiconductor
Type
Low Noiser
Specifications of MMBT5087LT1G
Transistor Type
PNP
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100µA, 5V
Power - Max
225mW
Frequency - Transition
40MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
- 0.05 A
Maximum Dc Collector Current
0.05 A
Power Dissipation
225 mW
Maximum Operating Frequency
40 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
250 at 0.1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
-50 mA
Current, Gain
250
Frequency
40 MHz
Package Type
SOT-23
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-50 V
Voltage, Collector To Base
-50 V
Voltage, Collector To Emitter
-50 V
Voltage, Collector To Emitter, Saturation
-0.3 V
Voltage, Emitter To Base
-3 V
Number Of Elements
1
Collector-emitter Voltage
50V
Collector-base Voltage
50V
Emitter-base Voltage
3V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
250
Frequency (max)
40MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT5087LT1GOS
MMBT5087LT1GOS
MMBT5087LT1GOSTR
MMBT5087LT1GOS
MMBT5087LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT5087LT1G
Manufacturer:
ON
Quantity:
6 000
Company:
Part Number:
MMBT5087LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
MMBT5087LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT5087LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
1.0 M
500 k
200 k
100 k
1.0 M
500 k
200 k
100 k
5.0 k
2.0 k
1.0 k
5.0 k
2.0 k
1.0 k
50 k
20 k
10 k
50 k
20 k
10 k
200
200
500
100
500
100
10
10
0.5 dB
20
20
Figure 3. Narrow Band, 100 Hz
30
30
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
Figure 5. Wideband
50 70 100
50 70 100
0.5 dB
1.0 dB
200 300
200 300
BANDWIDTH = 1.0 Hz
10 Hz to 15.7 kHz
NOISE FIGURE CONTOURS
1.0 dB
2.0 dB
(V
3.0 dB
2.0 dB
5.0 dB
CE
500 700 1.0 k
500 700 1.0 k
3.0 dB
5.0 dB
http://onsemi.com
= − 5.0 Vdc, T
3
1.0 M
500 k
200 k
100 k
Noise Figure is Defined as:
NF + 20 log 10
e
I
K
T
R
5.0 k
2.0 k
1.0 k
n
50 k
20 k
10 k
n
500
200
100
S
A
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
10
= 25°C)
20
Figure 4. Narrow Band, 1.0 kHz
e n 2 ) 4KTR S ) I n 2 R S 2
30
I
C
, COLLECTOR CURRENT (mA)
50 70 100
4KTR S
0.5 dB
−23
j/°K)
200 300
BANDWIDTH = 1.0 Hz
1 2
2.0 dB
3.0 dB
1.0 dB
500 700 1.0 k
5.0 dB