MMBT5087LT1G ON Semiconductor, MMBT5087LT1G Datasheet - Page 2
MMBT5087LT1G
Manufacturer Part Number
MMBT5087LT1G
Description
TRANS GP SS PNP LN 50V SOT23
Manufacturer
ON Semiconductor
Type
Low Noiser
Specifications of MMBT5087LT1G
Transistor Type
PNP
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100µA, 5V
Power - Max
225mW
Frequency - Transition
40MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
- 0.05 A
Maximum Dc Collector Current
0.05 A
Power Dissipation
225 mW
Maximum Operating Frequency
40 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
250 at 0.1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
-50 mA
Current, Gain
250
Frequency
40 MHz
Package Type
SOT-23
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-50 V
Voltage, Collector To Base
-50 V
Voltage, Collector To Emitter
-50 V
Voltage, Collector To Emitter, Saturation
-0.3 V
Voltage, Emitter To Base
-3 V
Number Of Elements
1
Collector-emitter Voltage
50V
Collector-base Voltage
50V
Emitter-base Voltage
3V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
250
Frequency (max)
40MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT5087LT1GOS
MMBT5087LT1GOS
MMBT5087LT1GOSTR
MMBT5087LT1GOS
MMBT5087LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT5087LT1G
Manufacturer:
ON
Quantity:
6 000
Company:
Part Number:
MMBT5087LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
MMBT5087LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT5087LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current−Gain — Bandwidth Product
Output Capacitance
Small−Signal Current Gain
Noise Figure
7.0
5.0
3.0
2.0
1.0
10
10
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(V
(I
(I
(I
1.0 mA
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
= −100 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −10 mAdc, I
= −10 mAdc, I
= −500 mAdc, V
= −1.0 mAdc, V
= −20 mAdc, V
= −100 mAdc, V
= −1.0 mAdc, I
= −100 mAdc, I
20
= −10 Vdc, I
= −35 Vdc, I
= −5.0 Vdc, I
50
Figure 1. Noise Voltage
B
B
100
E
E
B
E
CE
E
CE
CE
CE
CE
CE
CE
= −1.0 mAdc)
= −1.0 mAdc)
= 0)
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
f, FREQUENCY (Hz)
I
C
= −5.0 Vdc)
= −5.0 Vdc, R
100 mA
300 mA
30 mA
= −5.0 Vdc)
= −5.0 Vdc)
= −5.0 Vdc, f = 20 MHz)
= −5.0 Vdc, f = 1.0 kHz)
= −5.0 Vdc, R
= 10 mA
200
Characteristic
500 1.0 k
(T
S
S
BANDWIDTH = 1.0 Hz
A
= 10 kW, f = 1.0 kHz)
TYPICAL NOISE CHARACTERISTICS
= 3.0 kW, f = 1.0 kHz)
= 25°C unless otherwise noted)
R
2.0 k
S
(V
≈ 0
CE
5.0 k 10 k
http://onsemi.com
= − 5.0 Vdc, T
2
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
A
10
= 25°C)
20
50
Figure 2. Noise Current
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
100
I
CE(sat)
BE(sat)
C
h
CBO
NF
h
f
obo
FE
T
f, FREQUENCY (Hz)
fe
I
C
200
= 1.0 mA
100 mA
300 mA
30 mA
10 mA
500
Min
−50
−50
250
250
250
250
40
−
−
−
−
−
−
−
BANDWIDTH = 1.0 Hz
1.0 k 2.0 k
Max
−0.3
0.85
−10
−50
800
900
4.0
2.0
2.0
R
−
−
−
−
−
S
≈ ∞
5.0 k 10 k
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
dB
pF
−
−