MMBT3906LT1 Infineon Technologies, MMBT3906LT1 Datasheet
MMBT3906LT1
Manufacturer Part Number
MMBT3906LT1
Description
TRANSISTOR SWITCHING PNP SOT-23
Manufacturer
Infineon Technologies
Specifications of MMBT3906LT1
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
330mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
MMBT3906LT1INTR
MMBT3906LT1XT
MMBT3906LT1XTINTR
MMBT3906LT1XTINTR
SP000011678
MMBT3906LT1XT
MMBT3906LT1XTINTR
MMBT3906LT1XTINTR
SP000011678
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SMBT3906/ MMBT3906
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1 For calculation of R
PNP Silicon Switching Transistor
Type
S
Complementary type:
SMBT3904/ MMBT3904 (NPN)
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
= 71 °C
thJA
please refer to Application Note Thermal Resistance
1)
s2A
Marking
1 = B
1
Pin Configuration
Symbol
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
EBO
tot
thJS
2 = E
SMBT3906/ MMBT3906
3 = C
-65 ... 150
3
Value
Value
200
330
150
40
40
240
5
SOT23
Package
1
Jul-28-2003
VPS05161
Unit
V
mA
mW
°C
Unit
K/W
2
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MMBT3906LT1 Summary of contents
Page 1
PNP Silicon Switching Transistor High DC current gain: 0 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904/ MMBT3904 (NPN) Type SMBT3906/ MMBT3906 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation- T ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base breakdown voltage µ ...
Page 3
AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance MHz EB ...
Page 4
Test circuit Delay and rise time <1 300 ns Storage and fall time <1 -10 < < 500 +0 -10 ...
Page 5
DC current gain normalized 125 - Total power dissipation P * ...
Page 6
Short-circuit forward current transfer ratio 21e 10V 1MHz 21e Open-circuit output admittance ...
Page 7
Delay time Rise time Fall ...