MMBTA 56 LT1 Infineon Technologies, MMBTA 56 LT1 Datasheet - Page 4

• Manufacturer Part Number: MMBTA 56 LT1
• Description: TRANSISTOR PNP 80V SOT-23
• Manufacturer: Infineon Technologies

Specifications of MMBTA 56 LT1

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Maximum Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: MMBTA 56 LT1; MMBTA56LT1INTR; MMBTA56LT1XT; SP000011691

Collector cutoff current I
V
Collector-base capacitance C
Emitter-base capacitance C
CBO
CB
10
nA
10
10
10
10
10
pF
= 80 V
65
55
50
45
40
35
30
25
20
15
10
5
5
5
5
-1
5
0
4
3
2
1
0
0
0
4
50
8
CEB
12
CBO
max
100
eb
=
cb
16
= (V
T
typ
A
= (V
(T
EHP00851
V
A
V
EB
C
)
CB
CB
CCB
)
150
(V
22
)
EB
)
4
f
Transition frequency f
V
Total power dissipation P
T
CE
MHz
mW
10
10
10
360
300
270
240
210
180
150
120
5
5
= parameter in V, f = 2 GHz
90
60
30
10
3
1
2
0
0
0
15
30
5
45
10
SMBTA56/MMBTA56
1
60
T
75
=
5
90 105 120
tot
10
(I
= (T
C
2
)
2007-04-19
S
mA
C
EHP00848
)
T
°C
S
150
10
3