BC 849CW H6327 Infineon Technologies, BC 849CW H6327 Datasheet - Page 3
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BC 849CW H6327
Manufacturer Part Number
BC 849CW H6327
Description
TRANS AF NPN 30V 100MA SOT323
Manufacturer
Infineon Technologies
Datasheet
1.BC847AE6327.pdf
(15 pages)
Specifications of BC 849CW H6327
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Maximum Ratings
Parameter
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Emitter-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector current
Peak collector current, t
Total power dissipation-
T
T
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC846-BC850
BC847F
BC847L3-BC848L3
BC846W-BC850W
For calculation of R
S
S
S
S
≤ 71 °C, BC846-BC850
≤ 128 °C, BC847F
≤ 135 °C, BC847L3-BC848L3
≤ 124 °C, BC846W-BC850W
thJA
please refer to Application Note Thermal Resistance
p
≤ 10 ms
1)
3
Symbol
V
V
V
V
I
I
P
T
T
Symbol
R
C
CM
j
stg
CEO
CES
CBO
EBO
tot
thJS
-65 ... 150
Value
BC846...-BC850...
Value
≤ 240
≤ 105
≤ 90
≤ 60
330
250
250
250
100
200
150
65
45
30
80
50
30
80
50
30
6
6
6
2010-06-28
Unit
V
mA
mW
°C
Unit
K/W