MMBT4124LT1G ON Semiconductor, MMBT4124LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT4124LT1G
• Description: TRANS NPN GP 20V 200MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMBT4124LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.2 A
• Dc Collector/base Gain Hfe Min: 120
• Maximum Operating Frequency: 300 MHz
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 25V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 120
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3)
Collector−Emitter Saturation Voltage (Note 3)
Base−Emitter Saturation Voltage (Note 3)
Current−Gain − Bandwidth Product
Input Capacitance
Collector−Base Capacitance
Small−Signal Current Gain
Current Gain − High Frequency
Noise Figure
7.0
5.0
3.0
2.0
1.0
10
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(V
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
E
C
C
C
C
0.1
CB
EB
EB
= 1.0 mAdc, I
= 10 mAdc, I
= 10 mAdc, I
= 2.0 mAdc, V
= 50 mAdc, V
= 50 mAdc, I
= 50 mAdc, I
= 10 mAdc, V
= 0, V
= 2.0 mAdc, V
= 10 mAdc, V
= 2.0 mAdc, V
= 100 mAdc, V
= 20 Vdc, I
= 3.0 Vdc, I
= 0.5 Vdc, I
0.2 0.3 0.5 0.7
CB
= 5.0 V, f = 1.0 MHz)
E
C
B
B
E
REVERSE BIAS VOLTAGE (VOLTS)
E
C
CE
CE
C
CE
= 0)
= 0)
CE
CE
CE
CE
= 5.0 mAdc)
= 5.0 mAdc)
= 0)
Figure 1. Capacitance
= 0)
= 0)
= 0, f = 1.0 MHz)
= 1.0 Vdc)
= 20 Vdc, f = 100 MHz)
= 20 Vdc, f = 100 MHz)
= 1.0 Vdc)
= 10 Vdc, R
= 10 V, f = 1.0 kHz)
= 5.0 Vdc, R
1.0
C
ibo
C
2.0 3.0 5.0 7.0 10
Characteristic
obo
S
S
= 10 k W, f = 1.0 kHz)
= 1.0 k W, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
20 30 40
http://onsemi.com
2
10.0
200
100
7.0
5.0
70
50
30
20
1.0
V
I
V
C
CC
EB(off)
/I
2.0 3.0
B
t
= 3 V
f
= 10
= 0.5 V
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Figure 2. Switching Times
CE(sat)
BE(sat)
I
I
C
|h
h
C
CBO
EBO
NF
h
I
f
FE
ibo
C
T
cb
fe
fe
5.0 7.0 10
, COLLECTOR CURRENT (mA)
|
t
r
t
d
t
Min
120
300
120
120
s
5.0
3.0
25
30
60
−
−
−
−
−
−
−
20 30
Max
0.95
360
480
480
0.3
8.0
4.0
5.0
50
50
−
−
−
−
−
−
50 70 100
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
−
−
−
200