MMBTA06LT1 Infineon Technologies, MMBTA06LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBTA06LT1
• Description: TRANSISTOR AF NPN SOT-23
• Manufacturer: Infineon Technologies

Specifications of MMBTA06LT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBTA06LT1INTR; MMBTA06LT1XT; MMBTA06LT1XTINTR; MMBTA06LT1XTINTR; SP000011685

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Collector-emitter cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
Base-emitter voltage
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
E
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
CE
CB
= 10 µA, I
= 1 mA, I
= 100 µA, I
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, V
= 20 mA, V
= 80 V, I
= 80 V, I
= 60 V, I
= 10 V, f = 1 MHz
B
C
E
E
B
= 0
E
CE
CE
= 0
B
= 0
= 0 , T
= 0
CE
CE
= 0
1)
= 10 mA
= 1 V
= 5 V, f = 20 MHz
= 1 V
= 1 V
1)
A
= 150 °C
A
= 25°C, unless otherwise specified
1)
2
f
C
Symbol
V
V
V
I
I
h
V
V
T
CBO
CEO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
cb
min.
100
100
80
80
4
-
-
-
-
-
-
-
SMBTA06/MMBTA06
Values
typ.
100
7
-
-
-
-
-
-
-
-
-
-
max.
0.25
100
0.1
1.2
20
2007-04-19
-
-
-
-
-
-
-
MHz
pF
Unit
V
µA
nA
-
V