BC 850BW H6327 Infineon Technologies, BC 850BW H6327 Datasheet - Page 6
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BC 850BW H6327
Manufacturer Part Number
BC 850BW H6327
Description
TRANS AF NPN 45V 100MA SOT323
Manufacturer
Infineon Technologies
Datasheet
1.BC847AE6327.pdf
(15 pages)
Specifications of BC 850BW H6327
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
h
Ι
DC current gain h
V
Base-emitter saturation voltage
I
C
C
FE
CE
10
= ƒ(V
mA
10
10
10
10
10
10
10
5
5
-1
5
5
5
= 5 V
2
1
0
3
2
1
0
10
0
100
-2
-50
BEsat
25
C
C
C
0.2
5
), h
10
FE
-1
100 C
25
0.4
-50 C
FE
= 20
C
C
5
= ƒ(I
10
0.6
0
C
)
0.8
5
10
1
EHP00365
Ι
V
EHP00364
mA
V
C
BEsat
10
1.2
2
6
Ι
Collector-emitter saturation voltage
I
Collector cutoff current I
V
Ι
C
CB0
C
CB
10
= ƒ(V
mA
10
10
10
nA
10
10
10
10
10
5
5
-1
= 30 V
5
5
5
1
0
2
1
4
3
2
0
0
0
CEsat
0.1
), h
FE
50
-50
100
25
= 20
0.2
BC846...-BC850...
C
C
C
CBO
0.3
100
= ƒ(T
2010-06-28
max
0.4
typ
˚C
EHP00415
EHP00367
T
V
A
A
CEsat
)
V
150
0.5