2N6547 STMicroelectronics, 2N6547 Datasheet

TRANSISTOR NPN 850V 15A TO-3

2N6547

Manufacturer Part Number
2N6547
Description
TRANSISTOR NPN 850V 15A TO-3
Manufacturer
STMicroelectronics
Type
High Voltage, High Powerr
Datasheets

Specifications of 2N6547

Transistor Type
NPN
Current - Collector (ic) (max)
15A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
5V @ 3A, 15A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
12 @ 5A, 2V
Power - Max
175W
Frequency - Transition
24MHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
400V
Collector-base Voltage(max)
850V
Emitter-base Voltage (max)
9V
Collector Current (dc) (max)
15A
Dc Current Gain (min)
12
Power Dissipation
175W
Frequency (max)
24MHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-3
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
15 A
Continuous Collector Current
15 A
Dc Collector/base Gain Hfe Min
6
Maximum Operating Frequency
24 MHz
Current, Collector
15 A
Current, Gain
30
Frequency
24 MHz
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1 °C/W
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
5 V
Voltage, Emitter To Base
9 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2592-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6547
Manufacturer:
MAXWELL
Quantity:
45 000
Part Number:
2N6547
Manufacturer:
ST/ON
Quantity:
100
APPLICATIONS
DESCRIPTION
The 2N6547 is a silicon Multiepitaxial Mesa NPN
transistor mounted in TO-3 metal case. It is
particulary intended for switching and industrial
applications from single and tree-phase mains.
ABSOLUTE MAXIMUM RATINGS
October 2001
Symbol
V
V
V
V
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
SWITCH MODE POWER SUPPLIES
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
T
P
I
I
CER
CES
CEO
EBO
I
CM
I
BM
T
stg
C
B
tot
j
Collector-Emitter Voltage (R
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
HIGH POWER NPN SILICON TRANSISTOR
Parameter
c
= 25
C
= 0)
B
o
BE
BE
C
= 0)
= 0)
= 50
)
INTERNAL SCHEMATIC DIAGRAM
-65 to200
Value
850
850
400
175
200
1
15
30
20
9
4
TO-3
2
2N6547
Unit
o
o
W
V
V
V
V
A
A
A
A
C
C
1/4

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2N6547 Summary of contents

Page 1

... APPLICATIONS SWITCH MODE POWER SUPPLIES FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The 2N6547 is a silicon Multiepitaxial Mesa NPN transistor mounted in TO-3 metal case particulary intended for switching and industrial applications from single and tree-phase mains. ABSOLUTE MAXIMUM RATINGS ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off Current CES ( Collector Cut-off Current CER ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Saturation BE(sat) Voltage h DC Current Gain FE f Transition Frequency ...

Page 3

... MIN. 13.10 0.433 1.15 0.038 1.65 0.059 8.92 0.327 20.00 0.748 11.10 0.421 17.20 0.649 26.00 0.984 4.09 0.157 39.30 1.515 30.30 1.187 2N6547 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 D C P003F 3/4 ...

Page 4

... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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