2N1893 STMicroelectronics, 2N1893 Datasheet - Page 2
![TRANSISTOR NPN 120V 0.5A TO-39](/photos/5/70/57060/to-39_sml.jpg)
2N1893
Manufacturer Part Number
2N1893
Description
TRANSISTOR NPN 120V 0.5A TO-39
Manufacturer
STMicroelectronics
Datasheet
1.2N1893.pdf
(5 pages)
Specifications of 2N1893
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
5V @ 15mA, 150mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 10V
Power - Max
800mW
Frequency - Transition
70MHz
Mounting Type
Through Hole
Package / Case
TO-39-3, TO-205AD, Metal Can
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
7 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
0.8 W
Maximum Operating Frequency
70 MHz
Dc Collector/base Gain Hfe Min
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2637-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N1893
Manufacturer:
MOT/ST
Quantity:
1 000
Part Number:
2N1893
Manufacturer:
MOTST
Quantity:
20 000
Part Number:
2N1893A
Manufacturer:
ST/MOTO
Quantity:
20 000
Part Number:
2N1893LS
Manufacturer:
ST/MOTO
Quantity:
20 000
2N1893
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/5
V
V
Pulsed: Pulse duration = 300 s, duty cycle
V
V
V
Symbol
V
R
(BR)CEO
R
(BR)CER
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
C
thj-case
h
I
I
h
thj-amb
CBO
EBO
FE
CBO
EBO
f
fe
T
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Base
Breakdown Voltage
(I
Collector-Emitter
Breakdown Voltage
(R
Collector-Emitter
Breakdown Voltage
(I
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Small Signal Current
Gain
Transition Frequency
Collector-Base
Capacitance
Emitter-Base
Capacitance
C
E
B
C
BE
= 0)
= 0)
= 0)
= 0)
Parameter
10
E
= 0)
)
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
T
I
I
I
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
E
C
C
CB
CB
EB
= 100 A
= 0
= 100 A
= 10 mA
= 10 mA
= 50 mA
= 150 mA
= 50 mA
= 150 mA
= 0.1 mA
= 10 mA
= 150 mA
= 10 mA
= 1 mA
= 5 mA
= 50 mA
= 0
= -55
= 5 V
= 90 V
= 90 V
case
1 %
= 25
o
V
V
Test Conditions
C
CB
EB
V
V
= 10 V
= 0.5 V
V
o
CE
CE
C unless otherwise specified)
CE
= 5 V
= 10 V
T
V
V
= 10 V f = 20MHz
I
I
I
I
V
V
C
B
B
B
B
CE
CE
CE
CE
= 150
= 15 mA
= 15 mA
= 5 mA
= 5 mA
= 10 V
= 10 V
= 10 V
= 10 V
f = 1MHz
f = 1MHz
f = 1KHz
o
f = 1KHz
Max
Max
C
Min.
120
100
50
80
20
35
40
20
30
45
7
187.5
Typ.
0.82
0.96
50
80
80
40
70
85
70
13
55
50
Max.
120
150
1.2
0.9
1.3
10
15
10
15
85
5
o
o
Unit
MHz
C/W
C/W
nA
nA
pF
pF
V
V
V
V
V
V
V
V
A