2N6036 STMicroelectronics, 2N6036 Datasheet

TRANS DARL PNP 80V 4A SOT-32

2N6036

Manufacturer Part Number
2N6036
Description
TRANS DARL PNP 80V 4A SOT-32
Manufacturer
STMicroelectronics
Type
Amplifier, Powerr
Datasheets

Specifications of 2N6036

Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
750 @ 2A, 3V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-126-3
Current, Gain
15000
Current, Input
-0.1 A
Current, Output
-4 A
Package Type
SOT-32
Polarity
PNP
Power Dissipation
40 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
83.3
Voltage, Collector To Emitter, Saturation
-3 V
Voltage, Input
-5 V
Voltage, Output
-80 V
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
40W
Dc Collector Current
4A
Dc Current Gain Hfe
750
No. Of Pins
3
Collector Current @ Hfe
4A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
497-2540-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6036
Manufacturer:
STM
Quantity:
80
Part Number:
2N6036
Manufacturer:
ST
0
Part Number:
2N6036
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
2N6036
Quantity:
50 000
Part Number:
2N6036.
Manufacturer:
ST
0
APPLICATIONS
DESCRIPTION
The 2N6036 and 2N6039 are complementary
silicon power Darlington transistors mounted in
Jedec SOT-32 plastic package.
ABSOLUTE MAXIMUM RATINGS
For PNP types voltage and current values are negative.
Symbol
2N6036 IS A STMicroelectronics
PREFERRED SALESTYPE
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
GENERAL PURPOSE SWITCHING
GENERAL PURPOSE AMPLIFIER
V
V
V
T
P
I
CBO
CEO
EBO
I
CM
I
T
stg
C
B
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
c
POWER DARLINGTON TRANSISTORS
C
25
E
= 0)
= 0)
B
o
C
= 0)
COMPLEMENTARY SILICON
NPN
PNP
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 7 K
-65 to 150
2N6036
2N6039
Value
SOT-32
150
0.1
80
80
40
5
4
8
R
2
Typ. = 230
3
2
1
2N6036
2N6039
Unit
o
o
W
V
V
V
A
A
A
C
C
1/6

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2N6036 Summary of contents

Page 1

... PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER DESCRIPTION The 2N6036 and 2N6039 are complementary silicon power Darlington transistors mounted in Jedec SOT-32 plastic package. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I CBO ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEX Current (V = -1.5V Collector Cut-off CBO Current ( Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter ...

Page 3

... H mm MAX. MIN. 7.8 0.291 10.8 0.413 0.9 0.028 0.75 0.019 2.7 0.040 1.3 0.039 16.0 0.606 2.2 4.65 0.163 3.8 3.2 0.118 2. 2N6036/2N6039 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 0.087 0.183 0.150 0.126 0.100 0016114 5/6 ...

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