2N2219A STMicroelectronics, 2N2219A Datasheet - Page 2

TRANSISTOR NPN 75V 0.6A TO-39

2N2219A

Manufacturer Part Number
2N2219A
Description
TRANSISTOR NPN 75V 0.6A TO-39
Manufacturer
STMicroelectronics
Type
Switchr
Datasheets

Specifications of 2N2219A

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
800mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-39-3, TO-205AD, Metal Can
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
0.8 W
Maximum Operating Frequency
300 MHz
Dc Collector/base Gain Hfe Min
40
Current, Collector
0.6 A
Current, Collector Cutoff
10 nA
Current, Gain
300
Frequency
300 MHz
Package Type
TO-39
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Temperature, Operating, Maximum
175 °C
Thermal Resistance, Junction To Ambient
187.5 °C/W
Voltage, Breakdown, Collector To Base
75 V
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Breakdown, Emitter To Base
6 V
Voltage, Collector To Base
75 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2595-5

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2N2219A / 2N2222A
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
* Pulsed: Pulse duration = 300 s, duty cycle
2/7
V
V
V
V
V
Symbol
R
(BR)CEO
R
R
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
C
thj-case
h
I
I
I
I
h
thj-amb
CBO
CEX
EBO
e(hie)
BEX
FE
EBO
CBO
f
fe
T
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (I
Collector Cut-off
Current (V
Base Cut-off Current
(V
Emitter Cut-off Current
(I
Collector-Base
Breakdown Voltage
(I
Collector-Emitter
Breakdown Voltage
(I
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Small Signal Current
Gain
Transition Frequency
Emitter-Base
Capacitance
Collector-Base
Capacitance
Real Part of Input
Impedance
C
E
B
C
BE
= 0)
= 0)
= 0)
= 0)
= -3V)
Parameter
E
BE
= 0)
= -3V)
1 %
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
T
I
I
I
f = 100 MHz
I
I
I
f = 300MHz
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
E
C
amb
CB
CB
CE
CE
EB
= 10 A
= 0
= 10 A
= 10 mA
= 150 mA
= 500 mA
= 150 mA
= 500 mA
= 0.1 mA
= 1 mA
= 10 mA
= 150 mA
= 500 mA
= 150 mA
= 10 mA
= 1 mA
= 10 mA
= 20 mA
= 0
= 20 mA
= 3 V
= 60 V
= 60 V
= 60 V
= 60 V
case
= -55
= 25
V
V
Test Conditions
o
CB
EB
C
V
V
= 0.5 V
= 10 V
V
V
o
T
CE
CE
C unless otherwise specified)
I
I
I
I
V
V
V
V
V
V
j
V
CE
CE
B
B
B
B
= 150
CE
CE
CE
CE
CE
CE
CE
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 10 V
= 10 V
= 20 V
= 20 V
= 10 V
= 10 V
= 10 V
= 10 V
= 1 V
= 10 V
= 10 V
Max
Max
o
C
f = 100KHz
f = 100 KHz
f = 1KHz
f = 1KHz
TO-39
187.5
50
Min.
100
0.6
40
75
35
50
75
40
50
35
50
75
6
Typ.
300
TO-18
83.3
300
Max.
300
300
375
0.3
1.2
10
10
10
20
10
25
60
1
2
8
o
o
Unit
MHz
C/W
C/W
nA
nA
nA
nA
pF
pF
V
V
V
V
V
V
V
A

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