MJD31CT4-A STMicroelectronics, MJD31CT4-A Datasheet - Page 3

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MJD31CT4-A

Manufacturer Part Number
MJD31CT4-A
Description
TRANSISTOR NPN 100V 3A DPAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of MJD31CT4-A

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
15W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
15000 mW
Maximum Operating Temperature
+ 150 C
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
15W
Dc Collector Current
3A
Dc Current Gain Hfe
50
Operating Temperature Range
-65°C To +150°C
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-10312-2
MJD31CT4-A
MJD31CT4-A
2
2.1
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Electrical characteristic (curves)
Figure 2.
V
case
V
V
CEO(sus)
Symbol
CE(sat)
BE(on)
I
I
I
h
CEO
EBO
CES
FE
= 25 °C unless otherwise specified.
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter on voltage
DC current gain
Safe operating area
B
C
B
BE
= 0)
= 0)
= 0)
= 0)
Parameter
Doc ID 13473 Rev 3
V
V
V
I
I
I
I
I
C
C
C
C
C
CE
CB
EB
= 30 mA
= 3 A
= 3 A
= 1 A
= 3 A
= 5 V
= 100 V
= 60 V
Test conditions
Figure 3.
_
_
_ _
V
V
V
I
CE
B
CE
CE
= 375 mA
= 4 V
= 4 V
= 4 V
Derating curve
Electrical characteristics
Min.
100
25
10
Typ.
-
-
-
-
-
-
-
Max.
0.1
1.2
1.8
20
50
50
Unit
mA
µA
µA
V
V
V
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